Allicdata Part #: | BZM55B2V4-TR3-ND |
Manufacturer Part#: |
BZM55B2V4-TR3 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 500MW MICROMELF |
More Detail: | Zener Diode 2.4V 500mW Surface Mount MicroMELF |
DataSheet: | BZM55B2V4-TR3 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02249 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.4V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 600 Ohms |
Current - Reverse Leakage @ Vr: | 50µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | MicroMELF |
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The BZM55B2V4-TR3 is the type of a single Zener diode. The working principle of the diode is based on the properties of allowing the current to flow in one direction and restricting the flow in the other direction. In this kind of diode, a group of semiconductor diodes connected in series to form a Zener diode acts as a protection device for low voltage applications. Some of the common applications of BZM55B2V4-TR3 are listed below.
Applications of BZM55B2V4-TR3
- The BZM55B2V4-TR3 used in various industries such as automotive, industrial systems, telecommunication, medical and consumer electronic devices.
- It works as a regulator in applications such as battery charging, surge protection and voltage switching.
- It is a popular choice for protection circuitry in electronic devices that have high energy requirements.
- It is also suitable for wide range of applications such as TV sets, UPS’s, logic circuits, and low voltage power supplies.
Working Principle of BZM55B2V4-TR3
The working principle of the BZM55B2V4-TR3 is based on the so-called "Zener effect". This effect is based on the properties of P-N junctions. When a P-N junction is applied with a reverse bias, electrons and holes move in opposite directions. This causes a depletion region at the junction and the potential barrier between them. When the reverse bias voltage is increased above a certain value, the potential barrier decreases and electrons are able to cross over to the P-type side and holes to the N-type side.
The BZM55B2V4-TR3 is made up of two P-type layers and two N-type layers. The reverse applied voltage in this diode is constant which ensures that the resulting current is also constant. This property of the diode is the key to its ability to regulate the current flow. The current passing through the diode can be regulated by controlling the voltage applied to it, thus making it suitable for many applications.
The BZM55B2V4-TR3 is used in devices that require low voltage protection, such as mobile phones and handheld devices. It prevents the device from damage due to over-voltage or short-circuit as it limits the current passing through the device. It is also used in other applications such as surge protection, rectification and battery charging. It is widely used in industrial installations and automotive designs for providing stable and reliable power supply.
The specific data is subject to PDF, and the above content is for reference
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