BZM55C10-TR3 Allicdata Electronics
Allicdata Part #:

BZM55C10-TR3GITR-ND

Manufacturer Part#:

BZM55C10-TR3

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 10V 500MW MICROMELF
More Detail: Zener Diode 10V 500mW Surface Mount MicroMELF
DataSheet: BZM55C10-TR3 datasheetBZM55C10-TR3 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01912
30000 +: $ 0.01799
50000 +: $ 0.01687
100000 +: $ 0.01499
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 7.5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Description

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The BZM55C10-TR3 is a single Zener diode from a range of voltage regulator and signal processing diodes designed for a wide range of applications. The diode offers a maximum voltage of 10V and a rating of 200mW at ± 5mA intervals. The diode provides a low leakage current, as well as a low dynamic resistance and reverse recovery time. It is suitable for signal shuffler, signal mixer, switching regulator and multivibrator applications.

The BZM55C10-TR3 is available in a through-hole package and requires a minimum amount of PCB space. The reduced space makes the diode suitable for space-sensitive applications, such as radio electronics and mobile communications. The diode is also available with a TLP-1192 package that offers a flux protected design and increased reliability.

The BZM55C10-TR3 features an avalanche breakdown voltage of 9.4V as well as a low Zener capacitance of 0.38 pF. The diode has a high junction temperature of 125⁰C and is package in a hermetic plastic surface-mount. It is available in both uni- and bi-directional configurations and is manufactured from wafer-level post trimming technologies.

The functionality of the BZM55C10-TR3 is based on its Zener diode characteristics. It uses Zener breakdown to achieve a predetermined voltage across its two terminals. Even though the Zener diode is essentially a reverse-biased diode, it also shares the same characteristics of a forward-biased diode, allowing it to regulate the voltage between two terminals. The working principle of the BZM55C10-TR3 is similar to other Zener diode components in that it uses Zener breakdown to achieve voltage regulation and protection. The breakdown voltage is determined by the characteristics of the semiconductor material used in the diode and is usually between 5 to 500 volts. As the applied voltage increases, the resistance of the material decreases until a point where current flows in the reverse direction, creating a Zener breakdown. The precise breakdown voltage of the BZM55C10-TR3 can be determined by a simple equation based on the bandgap energy and junction temperature of the material.

The application area for the BZM55C10-TR3 is quite extensive. It is often used as a reference voltage in transistor circuits and regulated power supply circuits. It is also used in switching regulators and signal regulators, both in analog and digital circuits. In addition, it is used in communications systems and low-level signal detection circuits. It is also used in various electronic circuits and systems as an overvoltage protection device. The versatile performance and design of the BZM55C10-TR3 makes it suitable for a wide range of applications, such as computing, telecommunications, automotive and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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