BZM55C3V9-TR3 Allicdata Electronics
Allicdata Part #:

BZM55C3V9-TR3-ND

Manufacturer Part#:

BZM55C3V9-TR3

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 500MW MICROMELF
More Detail: Zener Diode 3.9V 500mW Surface Mount MicroMELF
DataSheet: BZM55C3V9-TR3 datasheetBZM55C3V9-TR3 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01912
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 600 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Description

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The BZM55C3V9-TR3 is a subminiature zener diode optimized for surface mounted applications. It has a variety of uses, including high-speed switching, precision noise suppression, and voltage regulation.

In terms of the device\'s application field, BZM55C3V9-TR3 is ideally suited to provide a highly regulated shunt reference in power supplies, voltage regulators, and other forms of noise suppression. It also offers excellent static and dynamic characteristics and high reliability. This makes it well suited for high-frequency switching and in applications where low-error voltage regulation is required.

The BZM55C3V9-TR3 provides excellent noise suppression and voltage regulation. Its reverse leakage current (I-R) is a fraction of the total zener current, hence providing very low error rates in applications requiring noise rejection or ESD protection. It operates at a maximum reverse voltage of 3.0V and is capable of dissipating a power rating of 500mW.

The device is coated with a special epoxy qualified for automatic pick and placement operations and is supplied in a widely available SOT-23 package. Its tight-tolerance and low-noise behavior make it possible to reduce component count and power consumption in industrial control systems and other systems which require precise voltage regulation.

BZM55C3V9-TR3\'s working principle is based on the physical principle of avalanche breakdown. As current increases in this reverse-biased device, the voltage across the diode\'s P-N junction rises until a critical voltage is reached. At this point, the junction, which is equipped with internal protection, suddenly conducts with a large current. This current then continues to flow even when the external force is removed.

The breakdown voltage of the BZM55C3V9-TR3 device is tightly regulated at 3V. This enable it to provide precision voltage regulation with a low voltage drop. The device also has excellent dynamic characteristics, which enable it to respond quickly to voltage changes without affecting the integrity of the power supply.

In conclusion, the BZM55C3V9-TR3 is an excellent choice for applications requiring highly regulated shunt reference, low-error voltage regulation and high-speed switching. Its tight-tolerance, low-noise characteristic, robust package and high reliability make it a practical alternative to other types of single diodes.

The specific data is subject to PDF, and the above content is for reference

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