| Allicdata Part #: | BZT52B33-TP-ND |
| Manufacturer Part#: |
BZT52B33-TP |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE ZENER 33V 410MW SOD123 |
| More Detail: | Zener Diode 33V 410mW ±2% Surface Mount SOD-123 |
| DataSheet: | BZT52B33-TP Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.03043 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±2% |
| Power - Max: | 410mW |
| Impedance (Max) (Zzt): | 80 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 25V |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOD-123 |
| Supplier Device Package: | SOD-123 |
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Diodes - Zener - Single
The BZT52B33-TP diode, often referred to as a “Zener diode,” is a single junction zener diode, designed for positive voltage regulation applications. As such, it has a negative resistance characteristic and a reverse bias breakdown voltage of 33 volts. The diode is rated at 1.3 watts and has a temperature coefficient of ±2mA/°C.
The primary application for the BZT52B33-TP is voltage regulation. In this application, it is used to provide a regulated output voltage in an electrical circuit, even if the input voltage varies by a certain amount. The diode is able to do this by exploiting its negative resistance characteristic and its zener breakdown voltage.
When the diode is reverse biased, electrons flow away from the p-type region and become trapped in the n-type regions. This produces an increase in the electric field strength around the junction and causes a breakdown of the junction, releasing the trapped electrons and allowing them to flow across the junction. This produces a sharp decrease in the voltage across the diode and a reduction in the total current through the circuit.
The breakdown voltage of the diode is determined by the thickness of the depletion region and the type of dopants used to create the regions. In the case of the BZT52B33-TP, the breakdown voltage is 33 volts. The reverse leakage current of the diode is also determined by the dopants used and is relatively low, which is important for applications that require a precise voltage output.
The diode\'s temperature coefficient can also be significant. A higher temperature coefficient will increase the diode\'s sensitivity to variations in temperature and may require more precise voltage regulation. In the case of the BZT52B33-TP, the temperature coefficient is ±2mA/°C.
The BZT52B33-TP is a single junction zener diode with a breakdown voltage of 33 volts and a low temperature coefficient. It is primarily used in voltage regulation applications, exploiting its negative resistance characteristics and its zener breakdown voltage to maintain a regulated output voltage in an electrical circuit, even if the input voltage varies by a certain amount.
The specific data is subject to PDF, and the above content is for reference
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| BZT52C36-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 36V 410MW SOD... |
| BZT52HC10WF-7 | Diodes Incor... | 0.04 $ | 1000 | DIODE ZENER 10V 375MW SOD... |
| BZT52-C33X | Nexperia USA... | 0.03 $ | 12000 | DIODE ZENER 33V 350MW SOD... |
| BZT55C2V7 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 2.7V 500MW MI... |
| BZT55C5V6 L1G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 5.6V 500MW MI... |
| BZT52B11-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 500MW SOD-123... |
| BZT52B16-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 500MW SOD-123... |
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| BZT52B15-HE3-08 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 500MW SOD-123... |
| BZT52B3V3-G3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 3.3V 410MW SO... |
| BZT55C75 L0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE ZENER 75V 500MW MIN... |
| BZT52-C68X | Nexperia USA... | 0.03 $ | 1000 | DIODE ZENER 68V 350MW SOD... |
| BZT52B20-G RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE ZENER 20V 410MW SOD... |
| BZT52B68 RHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE ZENER 68V 500MW SOD... |
| BZT52C12S-7 | Diodes Incor... | -- | 1000 | DIODE ZENER 12V 200MW SOD... |
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| BZT52C22S-7-F | Diodes Incor... | -- | 24000 | DIODE ZENER 22V 200MW SOD... |
| BZT52-C2V4J | Nexperia USA... | 0.02 $ | 1000 | DIODE ZENER 2.4V 350MW SO... |
| BZT52C5V1 RHG | Taiwan Semic... | 0.03 $ | 3000 | DIODE ZENER 5.1V 500MW SO... |
| BZT52C39S-7-F | Diodes Incor... | -- | 9000 | DIODE ZENER 39V 200MW SOD... |
| BZT52C22S-TP | Micro Commer... | 0.04 $ | 3000 | DIODE ZENER 22V 200MW SOD... |
| BZT52HC5V6WF-7 | Diodes Incor... | 0.04 $ | 1000 | DIODE ZENER 5.6V 375MW SO... |
| BZT52-C5V6X | Nexperia USA... | 0.03 $ | 1000 | DIODE ZENER 5.6V 350MW SO... |
| BZT52B13-E3-08 | Vishay Semic... | 0.04 $ | 1000 | DIODE ZENER 500MW SOD-123... |
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| BZT52C27-HE3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE ZENER 27V 410MW SOD... |
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BZT52B33-TP Datasheet/PDF