BZT52B33-TP Allicdata Electronics
Allicdata Part #:

BZT52B33-TP-ND

Manufacturer Part#:

BZT52B33-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 33V 410MW SOD123
More Detail: Zener Diode 33V 410mW ±2% Surface Mount SOD-123
DataSheet: BZT52B33-TP datasheetBZT52B33-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03043
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±2%
Power - Max: 410mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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Diodes - Zener - Single

The BZT52B33-TP diode, often referred to as a “Zener diode,” is a single junction zener diode, designed for positive voltage regulation applications. As such, it has a negative resistance characteristic and a reverse bias breakdown voltage of 33 volts. The diode is rated at 1.3 watts and has a temperature coefficient of ±2mA/°C.

The primary application for the BZT52B33-TP is voltage regulation. In this application, it is used to provide a regulated output voltage in an electrical circuit, even if the input voltage varies by a certain amount. The diode is able to do this by exploiting its negative resistance characteristic and its zener breakdown voltage.

When the diode is reverse biased, electrons flow away from the p-type region and become trapped in the n-type regions. This produces an increase in the electric field strength around the junction and causes a breakdown of the junction, releasing the trapped electrons and allowing them to flow across the junction. This produces a sharp decrease in the voltage across the diode and a reduction in the total current through the circuit.

The breakdown voltage of the diode is determined by the thickness of the depletion region and the type of dopants used to create the regions. In the case of the BZT52B33-TP, the breakdown voltage is 33 volts. The reverse leakage current of the diode is also determined by the dopants used and is relatively low, which is important for applications that require a precise voltage output.

The diode\'s temperature coefficient can also be significant. A higher temperature coefficient will increase the diode\'s sensitivity to variations in temperature and may require more precise voltage regulation. In the case of the BZT52B33-TP, the temperature coefficient is ±2mA/°C.

The BZT52B33-TP is a single junction zener diode with a breakdown voltage of 33 volts and a low temperature coefficient. It is primarily used in voltage regulation applications, exploiting its negative resistance characteristics and its zener breakdown voltage to maintain a regulated output voltage in an electrical circuit, even if the input voltage varies by a certain amount.

The specific data is subject to PDF, and the above content is for reference

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