BZT52C6V8-TP Allicdata Electronics
Allicdata Part #:

BZT52C6V8-TPMSTR-ND

Manufacturer Part#:

BZT52C6V8-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 6.8V 500MW SOD123
More Detail: Zener Diode 6.8V 500mW ±6% Surface Mount SOD-123
DataSheet: BZT52C6V8-TP datasheetBZT52C6V8-TP Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±6%
Power - Max: 500mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: BZT52C6V8
Description

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The BZT52C6V8-TP is a single Zener diode from the STMicroelectronics family. It is housed in a miniature and flat surface-mount package and features high voltage breakdown capability with low reverse leakage current. It has an estimated voltage regulation tolerance of 6.5% and a high DC power dissipation rate. The device has a maximum operating temperature of 105°C and is commonly used for a variety of applications including switching, regulators, and protection circuits.

The BZT52C6V8-TP Zener diode offers a reliable overvoltage protection or voltage regulation to prevent malfunction or damage caused by surges or overvoltages. It is designed to pass current in a forward direction and clamp the voltage once it surpasses the breakdown voltage, allowing it to offer a superior level of protection. With an impressive high break down rating and low reverse leakage current and an excellent power dissipation rate, it is capable of providing a higher level of protection and a larger current flow.

The main applications for BZT52C6V8-TP Zener diode include over-voltage protection for electronic components, power supply design, power regulators, switches and circuit protection. It is particularly suitable for high voltage protection of automotive and telecommunications systems due to its high power dissipation and excellent breakdown voltage rating. This diode can also be used in the decoupling of pulse width modulated signals, voltage sources, and in power management circuits.

The working principle of the BZT52C6V8-TP Zener diode is based on the Zener effect. When a reverse voltage is applied to the diode, the electrons move to the level of energy as that of the depletion region, and the depletion width increases. When the built-in electric field increases and equal to the applied voltage, the diode breaks down and the current can flow through the diode. This type of diode has a very low dynamic impedance, which allows it to pass the voltage without any significant drop.

In summary, the BZT52C6V8-TP Zener diode is a reliable and versatile device that offers high voltage breakdown capability and low reverse leakage current. It is capable of offering superior protection from over voltages and is commonly used in a variety of applications in the automotive, telecommunications, and power management industries. It has an excellent power dissipation rate and its working principle is based on the Zener effect, which allows it to pass the reverse voltage without any significant drop.

The specific data is subject to PDF, and the above content is for reference

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