Allicdata Part #: | BZT55C5V6L1G-ND |
Manufacturer Part#: |
BZT55C5V6 L1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 5.6V 500MW MINI MELF |
More Detail: | Zener Diode 5.6V 500mW ±5% Surface Mount Mini MELF |
DataSheet: | BZT55C5V6 L1G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01548 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | Mini MELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BZT55C5V6 L1G - Application Field and Working Principle
BZT55C5V6 L1G is a single Zener diode, manufactured by Diodes Incorporated. It is a versatile device that can be used for a variety of applications, including voltage regulation, amplifier stabilization, and noise reduction.
Structure
The BZT55C5V6 L1G is a junction type Zener diode in a hermetically sealed, leadless plastic package. It is designed with a miniature construction that also features a low thermal resistance and fast switching time. Its dimensions are as follows: SOT-23 (3-lead), 2.9mm x 1.6mm x 1.1mm, and 2.9mm x 2.8mm x 1.1mm for SOD-123 (4-lead).
Features and Benefits
The BZT55C5V6 L1G has a number of features and benefits that make it an ideal choice for many applications. It is capable of generating very low voltage drops and low junction capacitances. It also has a less than 3V Zener breakdown voltage and a maximum operating current of 100 mA. The device also offers excellent reliability, making it an ideal choice for various applications.
Applications
The BZT55C5V6 L1G can be used for a variety of applications. It is ideal for voltage regulation, amplifier stabilization, and noise reduction applications. It can also be used in high input level switching applications, load line protection for power amplifiers, and for EMI/RFI filtering. Additionally, it can be used for memory core voltage soft start, voltage monitoring in microprocessors, hot swap applications, and overvoltage protection in digital and electrical circuits.
Working Principle
The primary function of the BZT55C5V6 L1G is to regulate the cathode potential with respect to the anode potential. This is achieved by allowing a small current to flow through the device when the external voltage applied to the anode is greater than the Zener breakdown voltage. This current flow helps to keep the anode voltage at the breakdown voltage, thus providing stable voltage output. The device also features a low thermal resistance and fast switching time, making it ideal for high input level switching applications.
Conclusion
The BZT55C5V6 L1G is a versatile device that can be used in a variety of applications. Its structure is designed with a miniature construction that features a low thermal resistance and fast switching time. It is capable of generating very low voltage drops and low junction capacitances. Additionally, it offers excellent reliability and can be used for voltage regulation, amplifier stabilization, and noise reduction applications, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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