BZT52C51-E3-18 Allicdata Electronics
Allicdata Part #:

BZT52C51-E3-18-ND

Manufacturer Part#:

BZT52C51-E3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 51V 410MW SOD123
More Detail: Zener Diode 51V 410mW ±5% Surface Mount SOD-123
DataSheet: BZT52C51-E3-18 datasheetBZT52C51-E3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 410mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 38V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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The BZT52C51-E3-18 is a single Zener diode, which belongs to the diode family. It has an operating temperature range of -65°C to +175°C and a power dissipation of 500mW. This diode has a high surge capability and can be used in both high and low impedance circuits. It can also be used in various applications such as voltage regulation, EMI/RFI filtering and protection circuits.

The BZT52C51-E3-18 is a Zener diode which has two regions: the active region and the reverse-breakdown region. The active region is composed of the depletion region and the P-N junction. In the active region, the diode is non-conductive and does not allow current to pass through it. However, when a voltage which is large enough is applied to the diode, it enters the reverse-breakdown region. In this region, the diode starts to conduct and a low impedance path is created.

The working principle of the BZT52C51-E3-18 is based on the Zener effect. When a high reverse voltage is applied to the diode, the voltage causes a rapid increase in the diode’s electric field. This electric field induces a strong electric current which is then driven through the diode in the reverse direction. The diode is able to overcome its negative resistance and starts to conduct a strong current. This current is limited by the diode’s power dissipation resistance and as a result, a regulation voltage is created across the diode.

The BZT52C51-E3-18 can be used in a wide range of applications. It can be used as a voltage regulator by limiting the input voltage to a predetermined level. It can be used for EMI/RFI filtering to reduce the level of interference in the circuit. It can also be used for protection circuits, where it can protect a device from excessive current flow or from overvoltages.

In summary, the BZT52C51-E3-18 is a single Zener diode which belongs to the diode family and has an operating temperature range of -65°C to +175°C and a power dissipation of 500mW. The diode has a high surge handling capability and can be used in various applications such as voltage regulation, EMI/RFI filtering and protection circuits. The working principle is based on the Zener effect and the diode is able to create a low impedance path when a voltage large enough is applied to it.

The specific data is subject to PDF, and the above content is for reference

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