Allicdata Part #: | BZT52C5V1-E3-08TR-ND |
Manufacturer Part#: |
BZT52C5V1-E3-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 5.1V 410MW SOD123 |
More Detail: | Zener Diode 5.1V 410mW ±6% Surface Mount SOD-123 |
DataSheet: | BZT52C5V1-E3-08 Datasheet/PDF |
Quantity: | 12000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±6% |
Power - Max: | 410mW |
Impedance (Max) (Zzt): | 60 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 800mV |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | BZT52C5V1 |
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Diodes - Zener - Single: BZT52C5V1-E3-08 application field and working principle
BZT52C5V1-E3-08 is a single zener diode type which is commonly employed for electronics. Zener diodes are uniquely built to maintain the reverse current in a specified voltage range and the BZT52C5V1-E3-08 is used for multiple purposes. It is small and inexpensive but functions with high performance and stability.
Application field
The chief application of BZT52C5V1-E3-08 includes protection from transient voltages, stabilizing supply lines and protecting components from overvoltage. The reverse voltages of 5V used in the BZT52C5V1-E3-08 are ideal for use in compact systems and the average pane current of Zener diodes is extremely low at 5mW. It determines the application fields for the zener diode, focusing on protecting equipment from upsets or damages caused by electrostatic discharges or any unexpected voltage surges coming from inductive loads.
BZT52C5V1-E3-08 is also widely used in various control and power circuits. Also, temperature references, power supplies, multiplexers and voltage detectors are some of the circuits that employ BZT52C5V1-E3-08 as part of their functioning. Since the Zener diode is leak-free when forward biased, it is especially suitable for applications that involve circuits of high impedance.
Working principle
The working principle of Zener diodes is constituted by two stages: the first stage is called the breakdown stage, while the second stage is the clamping stage. The main idea of the first stage comes from the fact that a PN junction contains a sizeable amount of electric current.
When the reversed bias voltage is increased, angular momentum of the electrons increases, making be break-down voltage further and resulting in electrons bing injected from the valence bands of the P-type materials to the conduction bands of the N-type material. The complete process lowers the electric resistance of the PN junction thus, the current flow easily through the junction along with a leakage of electrons.
The phenomenon is called Zener break-down, due to low resistance of the PN junction, and small amount of power is converted into heat along with light energy. This also leads to the last stage, which is the clamping stage, which usually involves the use of capacitors, resistors and transistors.
The two main idea of the clamping stage is that, the voltage is clamped to the level of the breakdown voltage of the Zener diode while maintaining the desired system stability. This comparatively high forward biased current helps to reduce power loss, resulting in improved system efficiency. Therefore, Zener diodes not only provide desired system stability, but also help to keep the system power efficient.
Conclusion
In conclusion, BZT52C5V1-E3-08 is widely used as a single zener diode in multiple applications and its working principle includes two stages - the breakdown stage and the clamping stage. Its main application areas include protection from transient voltages, stabilizing supply lines and protecting components from overvoltage. It is cost-effective and highly efficient, making it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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