BZT52C68-HE3-18 Allicdata Electronics
Allicdata Part #:

BZT52C68-HE3-18-ND

Manufacturer Part#:

BZT52C68-HE3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 68V 410MW SOD123
More Detail: Zener Diode 68V 410mW ±5% Surface Mount SOD-123
DataSheet: BZT52C68-HE3-18 datasheetBZT52C68-HE3-18 Datasheet/PDF
Quantity: 1000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5%
Power - Max: 410mW
Impedance (Max) (Zzt): 200 Ohms
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Application field and working principle of BZT52C68-HE3-18

The BZT52C68-HE3-18 is a zinc oxide single diode device that is categorized under Zener diode family. With a nominal Zener voltage of 6.8V (plus or minus 5%) and an operating temperature range of -55 to +125℃, this particular type of diode has a variety of applications and is suitable for both large scale industrial and small scale domestic applications.

Features

  • Nominal Zener Voltage of 6.8V (plus or minus 5%)
  • Temperature coefficient of mode of 0.024V/K
  • Maximum reverse current (Leakage) of IZT at 6.8V of 8.0mA
  • High capacitance (68pF)
  • Package type: Heatsink SMD
  • Package size: 3.2 x 2.4 x 2.1 mm (L x W x H)

Applications

This single diode can be used in wide range of applications, a few of which include:

  • Voltage regulators, stabilize voltage drops
  • High power regulators
  • Clipping circuits
  • Surge protection
  • Precision measurement circuits
  • DC power supplies

Working principle

The zinc oxide type of single junction diode has two terminals, anode and cathode. The inner part of the device consists of different layers of the semiconductor material, with two separate layers termed as N-type and P-type. The cathode is connected to the N-type layer while the anode is connected to the P-type. The cathode is generally marked with a line or a negative sign (-).

During the forward bias, a large amount of electrons from the N-type layer is transferred to the P-type layer. This makes the N-type layer positive and the P-type layer negative in charge. This allows a current flow between the terminals, thus providing the forward resistance of the device.

From a reverse bias point of view, the anode voltage is increased while the cathode voltage is decreased. This creates a reverse potential difference between the two. A resistance is then created, in another words current stops flowing. If the voltage is increased high enough the reverse resistance suddenly breaks, this creates a condition termed "Zener breakdown." This particular side of device operation allows the BZT52C68-HE3-18 to be used for applications such as limiting voltage or clamping voltage, requiring protection from voltage spikes.

Conclusion

In conclusion, the BZT52C68-HE3-18 single diode device is ideal for applications that require voltage regulation and voltage spike protection. Its versatility allows it to be used in a range of applications on both large scale industrial and small scale domestic levels.

The specific data is subject to PDF, and the above content is for reference

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