BZT55B3V0 L1G Allicdata Electronics
Allicdata Part #:

BZT55B3V0L1G-ND

Manufacturer Part#:

BZT55B3V0 L1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 3V 500MW MINI MELF
More Detail: Zener Diode 3V 500mW ±2% Surface Mount Mini MELF
DataSheet: BZT55B3V0 L1G datasheetBZT55B3V0 L1G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 85 Ohms
Current - Reverse Leakage @ Vr: 4µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Description

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The BZT55B3V0 L1G is a Zener Diode, which belongs to the single category. The application field of this diode is to regulate the voltage level. It is designed for medium to high power and medium current applications which require low forward voltage drop and excellent avalanche characteristics. The maximum power output of this Zener Diode is 300 watts and has a maximum reverse current 65 mA. It is commonly used in applications such as voltage regulator, voltage isolator, and voltage stabilization.

The main purpose of the diode is to provide electrical and voltage stability. It works on the principle of rectification and flow of electrons. The diode acts as a barrier and does not allow any current to flow in the reverse direction. The forward bias characteristic of the diode plays a role in voltage regulation. The forward biased diode will allow the smooth flow of electrons, which then gets rectified in the opposite direction. As the voltage increases, the current in the diode will start to drop and it eventually reaches the forward voltage level of the diode. In other words, the diode will limit the voltage to its rated forward voltage.

The working principle of the BZT55B3V0 L1G is based on the same fundamental principles of any Zener diode. When it is subjected to a positive voltage, the diode starts to conduct current in the forward direction. As the voltage increases, the current through the diode will also increase. When the voltage reaches the reverse breakdown voltage, the current will stop increasing and the diode will become forward biased. The diode will then be capable of regulating the voltage to its rated forward voltage. The breakdown voltage of the diode is usually specified in the data sheet.

The BZT55B3V0 L1G is designed for medium to high power and medium current applications. Its excellent avalanche characteristics and low forward voltage drop make it a reliable choice for voltage regulation in various designs. It is usually used as a voltage regulator, voltage isolator, and voltage stabilization device. It can also be employed in the design of power converters and combinational logic circuits.

In conclusion, the BZT55B3V0 L1G Zener Diode belongs to the single category and is used for medium to high power and medium current applications. It is designed to regulate the voltage level and works on the same principle as other Zener diodes. The diode has an excellent avalanche characteristic, low forward voltage drop, and a breakdown voltage as specified in its data sheet.

The specific data is subject to PDF, and the above content is for reference

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