| Allicdata Part #: | BZT55B51L1G-ND |
| Manufacturer Part#: |
BZT55B51 L1G |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 51V 500MW MINI MELF |
| More Detail: | Zener Diode 51V 500mW ±2% Surface Mount Mini MELF |
| DataSheet: | BZT55B51 L1G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01693 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 51V |
| Tolerance: | ±2% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 125 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 38V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
| Supplier Device Package: | Mini MELF |
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The BZT55B51 L1G is a single zener diode that is commonly found in a wide array of applications. It has a wide variety of features designed to meet the needs of the user, such as low on-state voltage and high current capacity. A zener diode is a kind of diode which is designed to allow electric current to flow in only one direction while maintaining a specific voltage drop. It is commonly used as a voltage regulator. The BZT55B51 L1G is designed to regulate or control the voltage in electronic devices, ensuring reliable and efficient operation.This diode is capable of withstanding a wide range of temperatures, from -65°C to +200°C. Additionally, it has low leakage current to ensure minimal energy losses when the device is in operation. It also has very low capacitance, which makes it suitable for high-frequency circuits. Furthermore, the device is packaged with a ceramic seal, which ensures its uniform temperature coefficient and mechanical stability.The BZT55B51 L1G is commonly used in applications where a short-circuit protection is necessary, such as in voltage-controlled oscillators (VCOs), power supplies, and motor control circuits. Additionally, it can be used to protect electronic devices from electrical overloads and voltage fluctuations.The working principle of the BZT55B51 L1G is based on the Zener breakdown. The Zener breakdown occurs when the electric field between the two ends of the diode exceeds a critical value. When this happens, a negative resistance region is created and a sharp transition of charge carriers takes place. The result is that a voltage applied across the diode is maintained at a specific level Vz. This voltage is referred to as the Zener voltage, which can vary depending on the type of diode and the amount of power applied to it.The BZT55B51 L1G is designed to regulate the voltage applied to the diode at a preset value. This is achieved by the Zener effect, which is the phenomenon in which the breakdown voltage of the diode is maintained at a specific level Vz. The Zener effect causes the current flowing through the diode to be limited, ensuring that the output voltage stays within the safe range.In summary, the BZT55B51 L1G is a single zener diode designed for protecting electronic devices from electrical overloads and voltage fluctuations. It is capable of withstanding a wide range of temperatures, has low leakage current, and low capacitance. Its working principle is based on the Zener breakdown phenomenon, which ensures that the output voltage remains within the safe range. As such, it is a valuable component for circuit design and electronic device applications.
The specific data is subject to PDF, and the above content is for reference
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BZT55B51 L1G Datasheet/PDF