BZT55C3V3-GS08

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The BZT55C3V3-GS08 is a single Zener diode from the Diodes range of components. This unit has a reverse breakdown voltage of 3.3V, with a rated power dissipation of 500mW.

It has a very small physical size, meaning it is suitable for applications where space is at a premium. The temperature range over which this diode can be safely used is -65°C to +175°C, providing great versatility for a variety of applications. The current voltage relationship of this unit is not linear. This means that while its forward voltage is constant when a certain current is flowing, its reverse voltage is dependent on how much current is passing through it. This means that this diode can be used in applications involving potential sources which must be kept within a certain voltage band.

When a reverse voltage is applied to this diode, it will pass through the silicon junction material, providing the diode with a controlled current pathway for the energy to flow. This current will constructively add to the forward current, bringing the overall satisfactory current level to a stable and regulated level.

The Zener designation for this diode implies that any applied voltage above the nominal threshold of 3.3V will cause the diode to short-circuit. This can be used as a means of protection for circuits that may be subject to voltage spikes. This can also be used to regulate a source of variable voltage which needs to stay within a range in order to maintain power stability.

The BZT55C3V3-GS08 is ideal for use in circuits that require a low breakdown voltage, with a fast response time and a wide temperature band. The reverse voltage leakage is also very low, meaning this diode is suitable for applications where interference with other components may be a problem. The size and versatility of this unit make it ideal for use in a variety of situations, both commercial and industrial.

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