| Allicdata Part #: | BZT55C3V6L1G-ND |
| Manufacturer Part#: |
BZT55C3V6 L1G |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 3.6V 500MW MINI MELF |
| More Detail: | Zener Diode 3.6V 500mW ±5% Surface Mount Mini MELF |
| DataSheet: | BZT55C3V6 L1G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01548 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 3.6V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 85 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
| Supplier Device Package: | Mini MELF |
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Introduction
The BZT55C3V6 L1G diode is a general-purpose zener diode. It is usually used in various active protection circuits, voltage references, voltage stabilizing, and as a low-level light source.
Application Field
The BZT55C3V6 L1G is a single zener diode which is suitable for various active protection circuit, voltage references, voltage stabilizing, low-level light sources, mobile phone charger protection circuit, and other low voltage application.
With the typical break-down voltage of 3.3 V, the BZT55C3V6 L1G diode can be widely used for protection circuits, such as, power supply over-voltage protection, lightning strike by electrostatic discharge (ESD), TVS (transient voltage suppressor) protection, and as voltage stability method in street service, etc.
The BZT55C3V6 L1G diode can be used in low-level light sources to produce a steady, low brightness level. This can be useful in low visibility applications, such as night lighting. The diode can also be used as a mobile phone charger protection circuit, helping to secure phone charger from over-current, over-voltage and short-circuit.
Working Principle
The BZT55C3V6 L1G diode is a type of semiconductor device which utilizes the properties of the internal structure of junction diodes. Inside the diode, when the junction forward biases, it behaves as an ideal diode and allowed a current to flow from the anode to the cathode.
When the reverse-biased voltage of the diode reaches the break-down voltage (in this case, it is 3.3 V for the BZT55C3V6 L1G diode), the Zener effect will enable the current to flow from the cathode to anode, thus regulating the reverse-biased voltage of the diode.
Since the maximum current of the reverse bias operation is limited, it is usually used as a low-level protection circuit or low visible-light source. Usually, when the voltage reaches the breakdown voltage, a small surge current will be produced and devices connected to the BZT55C3V6 L1G diode will be protected from damage due to the sudden voltage rise.
Conclusion
In summary, the BZT55C3V6 L1G diode is a single zener diode which is suitable for active protection circuit, low-level lighting source, voltage references, and voltage stabilizing. Through reverse bias operation, the diode can provide protection from over-voltage and short-circuit.
The specific data is subject to PDF, and the above content is for reference
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BZT55C3V6 L1G Datasheet/PDF