BZV55C3V0

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	3V
Tolerance:	±7%
Current - Reverse Leakage @ Vr:	10µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AA (Glass)
Supplier Device Package:	DO-213AA
Base Part Number:	BZV55C3V0

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Diodes - Zener - Single - BZV55C3V0 Application Field and Working Principle

The BZV55C3V0 is a single Zener diode which is commonly used in a variety of applications. It is a low-power and low-voltage Zener diode, mainly used in designing a voltage regulator circuit that regulates the output voltage to a set value when there is a variation in input voltage. This device is also used in anti-surge protection in measuring devices, and in power supply applications.

Overview of Single Zener Diodes

A single Zener diode is a type of diode composed of a single layer of semiconductor material. They are used for regulating the voltage in a circuit so that the output voltage does not exceed a particular value. This is achieved when a sufficient current is applied over the Zener diode, resulting in the breakdown of the barrier and a consequent voltage drop across it. The voltage level at which the diode breaks down and the amount of current required to do so is a characteristic of the diode itself, and is determined by its manufacture.

Junction and Operating Principle of BZV55C3V0

The BZV55C3V0 is a single Zener diode with an operating junction temperature between -45°C and +85°C. It utilizes a graded internal Zener voltage process for its control and the Zener region is constructed with a shallow junction. The junction is formed by connecting a P-type semiconductor and an N-type semiconductor material. When a sufficient voltage level is applied to the diode, the current passes through the diode and the Zener junction at the P-N junction breaks down.The operating principle of the BZV55C3V0 is based on the breakdown of the barrier at the P-N junction that creates the diode. When the diode is reverse-biased, which means current passes from the cathode to the anode, a voltage potential is created and the barrier between the two layers of semiconductor material starts to build up. When the voltage reaches a particular level, the barrier between the two materials breaks down and a current starts to flow through the diode. The voltage level at which the diode breaks down is set at a certain value, also known as the Zener voltage or Zener breakdown voltage, and this is determined by the manufacture of the component.

Advantages of BZV55C3V0

The most notable advantages that the BZV55C3V0 offers are its low power consumption, its low cost, and its ability to regulate the voltage output. The low power consumption is due to the utilization of a shallow junction for controlling the Zener voltage of the component, meaning that it is relatively energy efficient compared to its competitors. The low cost of the device also makes it an attractive choice for designers as it offers good value for money. Furthermore, the ability to regulate the voltage output is invaluable in a variety of applications, such as measuring devices and power supplies.

Applications of BZV55C3V0

The BZV55C3V0 is a versatile diode and it is used in a variety of applications. It is used in the construction of voltage regulator circuits, where the output voltage is kept within a predetermined range by using the Zener voltage of the BZV55C3V0. This device is also used in anti-surge protection and in power supplies.In conclusion, the BZV55C3V0 is an important semiconductor device which is used in a variety of applications. It is a low-power and low-voltage Zener diode, and it utilizes a graded internal Zener voltage process for its control. The BZV55C3V0 offers some notable advantages, such as its low power consumption, its low cost, and its ability to regulate the output voltage. The BZV55C3V0 is used in designing voltage regulator circuits, in anti-surge protection and in power supplies.

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