| Allicdata Part #: | BZV55B56L0G-ND |
| Manufacturer Part#: |
BZV55B56 L0G |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 56V 500MW MINI MELF |
| More Detail: | Zener Diode 56V 500mW ±2% Surface Mount Mini MELF |
| DataSheet: | BZV55B56 L0G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01429 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 56V |
| Tolerance: | ±2% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 135 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 42V |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
| Supplier Device Package: | Mini MELF |
Description
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The BZV55B56L0G Zener Diode is a single device that is used as a voltage regulator and provides a predictable and consistent way to regulate and stabilize electrical current in an electrical circuit. It can also be used in applications such as AC-DC converters, DC-DC converters, and voltage multipliers. This device is characterized by a breakdown voltage of 5.6 volts, and a maximum total power dissipation of 500 mW. It is available in a MiniMELF package that is lead-free.
The working principle of this diode is based on the electrical breakdown of the N-type semiconductor material, due to reversevoltage bias. When sufficient voltage is applied to the diode, electrons leave their original conductive paths, creating a depletion region. This effectively blocks current from flowing in the reverse direction from the positive side of the diode. In the steady state, when the applied reverse-bias voltage is equal to the breakdown voltage, the device provides a much lower resistance than under normal conditions. This allows it to control the current flow and regulate the voltage.
The BZV55B56L0G is most commonly used in applications such as power supplies and voltage switching. In power supplies, its breakdown voltage allows it to limit the output voltage, while the low leakage current capability of the diode makes it ideal for high current applications. This device can also be used to protect voltage sensitive components in circuits, such as transistors, thyristors, and diodes. They can also be used in isolated power supplies andvoltage switching.
The BZV55B56L0G is designed to be a cost-effective, highly reliable solution for a wide range of voltage control applications. It is available in a variety of packages, which make it perfect for use in tight spaces such as circuit boards. Furthermore, its reverse breakdown voltage is highly stable over temperature. This device also features a high switching speed, low capacitance, and low voltage noise, making it a great choice for high frequency applications.
In summary, the BZV55B56L0G is a single N-type semiconductor diode that is used as a voltage regulator and provides a consistent way to regulate and stabilize electrical current in an electrical circuit. It is characterized by a breakdown voltage of 5.6 volts, and low capacitance, voltage noise, and switching speed. It is used in applications such as power supplies, voltage switching, protection of voltage sensitive components, and isolated power supplies. This device is available in a variety of packages, which make it perfect for use in tight spaces. The device is a cost-effective, reliable solution for a wide range of voltage control applications.
The specific data is subject to PDF, and the above content is for reference
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BZV55B56 L0G Datasheet/PDF