BZX84C3V9S-7-F Allicdata Electronics
Allicdata Part #:

BZX84C3V9S-FDITR-ND

Manufacturer Part#:

BZX84C3V9S-7-F

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER ARRAY 3.9V SOT363
More Detail: Zener Diode Array 2 Independent 3.9V 200mW ±6% SOT...
DataSheet: BZX84C3V9S-7-F datasheetBZX84C3V9S-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05216
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Packaging: Tape & Reel (TR) 
Part Status: Active
Configuration: 2 Independent
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: BZX84C3V9S
Series: --
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZX84C3V9S-7-F is a common component in the diodes - Zener - Array category, which contains components designed to provide superior performance, reliability, and efficiency. In this article we will discuss the application field and working principle of BZX84C3V9S-7-F.

The BZX84C3V9S-7-F is a surface-mounted Zener diode array with high-temperature stability that has applications in digital and analogue circuits. The diode array is made up of two Zener diodes connected in series and sharing a common terminal. The two Zeners are identical and have reverse breakdown voltages of 3.9V each, providing protection of 7.8V. The device has a low dynamic impedance, making it ideal for applications in which voltage variations should be minimized.

The BZX84C3V9S-7-F is typically used in audio and video circuits, telecoms and data communications systems, automotive systems, power management, and other electronic applications where protection from high-voltage transients is needed. The device is ideal for applications in which long-term protection from high-voltage transients is required, as the breakdown voltage will remain stable for extended periods of time.

The working principle of the BZX84C3V9S-7-F is based on the reverse breakdown of a PN junction, in which free electrons in the n-type semiconductor material can cross the junction and current can flow in the reverse direction. The diode consists of two Zener diodes connected in series, each with a reverse breakdown voltage of 3.9V. When the voltage across the device exceeds the breakdown voltage of 7.8V, the Zener diodes enter a reverse-breakdown state, allowing current to flow in the reverse direction.

The BZX84C3V9S-7-F also has a high thermal resistance, which means that it can provide protection from high temperatures without reaching thermal runaway. This is especially useful in applications where the device will be exposed to significant temperature variations. The device also has a low dynamic impedance, which helps to reduce voltage variations across the diodes, making them suitable for use in precision circuits.

The BZX84C3V9S-7-F diode array is an ideal component for a wide range of applications where long-term protection from high-voltage transients is required. It can be used in audio and video circuits, automotive systems, power management systems, and numerous other types of applications. The device has a stable breakdown voltage, a high thermal resistance, and a low dynamic impedance, making it suitable for use in precision circuits.

The specific data is subject to PDF, and the above content is for reference

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