BZX84B47-HE3-18

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A BZX84B47-HE3-18 is a single zener diode, part of the diode family. Such diodes are electrical components that allow current to travel in one direction from the anode side and out of the cathode side. The zener diode is unique in that when a certain reversed voltage is applied to the component, it breaks down and allows current to move in both directions.

The BZX84B47-HE3-18 has a breakdown voltage of 18 V and has a maximum power of 500 mW. It has a 400 mA average forward current and can withstand a peak forward current of 1 A. The component has a maximum junction temperature of 150 °C and a storage temperature range of -50 to +150 °C.

This component\'s main application field is voltage regulation, and its applications can range from consumer electronics to industrial electronics. Its main advantages are that it can be used in circuits as weak signals can be amplified, as well as provide protection against overvoltage using its zener voltage breakdown. This component can also be combined with other components to form a mixer or an amplifier.

The working principle of the BZX84B47-HE3-18 is similar to that of any diode. The component has two sides, the anode and the cathode. When a direct current is applied to the anode side, majority-carrier electrons will enter the component and be injected into the conducting layer. These electrons immediately encounter majority-carrier holes which have been there since it was manufactured. The combination of these two majority-carriers leads to current flow in the conducting layer, allowing current to flow from the anode side through the component and out of the cathode side.

When reverse biasing is applied to the BZX84B47-HE3-18, the holes in the conducting layer will be blocked and majority-carrier electrons will be injected instead. Each majority-carrier electron will encounter an electric field opposing it and its kinetic energy will be converted into thermal energy. This will create heat in the diode, increasing its temperature and allowing reverse biasing current to flow, eventually reaching the breakdown voltage.

When the component reaches the breakdown voltage, an avalanche breakdown occurs and more electrons will be injected into the diode, greatly increasing the amount of current. This current can both be meant for protection against overvoltage, or for signal amplification. Of course, the device should never be employed with voltages greater than the rated breakdown voltage.

In conclusion, the BZX84B47-HE3-18 is a single zener diode used mainly in voltage regulation circuits. Its main advantages are that it is versatile, allowing it to be used in different applications and fields, and it offers both overvoltage protection and signal amplification capabilities. Its working principle is similar to any diode, but it is unique in that it can withstand a certain reverse voltage before breaking down.

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