BZX84B5V6-HE3-08

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The BZX84B5V6-HE3-08 is a silicon dioxide planar Zener diode which works in the form of a single diode operated in the reverse breakdown region. This particular diode belongs to Zetex\'s BZX84 product family and offers 500 mW of maximum power dissipation in order to protect circuit elements from malfunctioning due to overstress caused by voltage or power surges. It is designed to withstand a maximum rating of 69.5 V in order to regulate the supply voltage level, dissipate the excessive power, and protect sensitive circuit elements.

In its working principle, the BZX84B5V6-HE3-08 is basically a heavily doped p-n junction diode that exhibits the reverse breakdown voltage analogous to a Zener diode. When the externally applied voltage is below the breakdown limit of the diode, the junction acts as an insulator, blocking the current flow, whereas when the externally applied voltage exceeds the breakdown limit, a large current rush is finite through the diode until it reaches the limit of the junction. This current flow that is regulated and limited by the breakdown voltage is known as avalanche or Zener breakdown.

In addition to acting as a reverse breakdown regulator and surge protector, the BZX84B5V6-HE3-08 also has applications in limiting current flow, providing up to 0.2 mA of limit current when placed across a power supply. It can also be used in signal switching circuits as a switch and amplifier, functioning as both a signal diode and signal amplifier respectively. Apart from these, the diode can be used to generate accurate reference voltages for various system components, providing a fixed and stable point for stabilization or integration into the system.

The BZX84B5V6-HE3-08 is widely available from various distributors and is widely utilized in a number of applications, including power supplies and converters, switching circuits, motor speed controllers and motor control circuits, automotive systems, vibration and motion control devices, telecommunications, test instrumentation and a variety of other digital and analog applications.

Apart from its multiple features and wide range of uses, the BZX84B5V6-HE3-08 also offers high temperature stability and performance as it is designed to operate in temperatures up to 150°C with a thermal resistance of 2.7°C/W. Additionally, the device also features high Breakdown Voltage Accuracy of ±2% and a tight circuit tolerance of ±0.5V.

In short, the BZX84B5V6-HE3-08 is highly sought after for its wide range of application areas, its performance, and its reliability in protecting various circuit elements from overstress and voltage or power surges.

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