CAV25320YE-GT3 Allicdata Electronics
Allicdata Part #:

CAV25320YE-GT3-ND

Manufacturer Part#:

CAV25320YE-GT3

Price: $ 0.35
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 32K SPI 10MHZ 8TSSOP
More Detail: EEPROM Memory IC 32Kb (4K x 8) SPI 10MHz 8-TSSOP
DataSheet: CAV25320YE-GT3 datasheetCAV25320YE-GT3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.31681
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CAV25320YE-GT3 is a type of memory, a technology that stores information. Memory is typically divided into two types: volatile and nonvolatile. Volatile memory requires power to retain stored information, while non-volatile memory does not. CAV25320YE-GT3 is an example of non-volatile memory.

The CAV25320YE-GT3 memory is integrated circuit (IC) technology, designed specifically for automotive embedded automotive applications. Its main application areas include embedded control, infotainment, and in-vehicle networking. The memory features multiple logic power supply, serial peripheral interface, secure JTAG and secure boot mechanism, and extended temperature operation range from -40°C to +125°C.

In terms of working principle, the CAV25320YE-GT3 memory uses a chip composed of millions of components etched onto a tiny silicon wafer. The components are arranged in layers on the chip and connected by a lattice of microscopic wires. When power is applied to the chip, these components and wires activate and provide an electronic signal, allowing the memory to store information.

The CAV25320YE-GT3 memory is made up of two distinct parts. The first is the physical memory layer, a silicon substrate upon which millions of connections, or transistors, are made. This component is usually the largest part of the memory and is responsible for the data transfer path between the chip and the outside world. The second component is the logic layer, which is a layer of software that allows communication between the chip and the memory controller.

The logic layer handles the task of managing the chip\'s internal functions and operations. This includes encoding and decoding data, addressing errors, and organizing the data into groups. The controller also includes error correction mechanisms for detecting and correcting errors that occur within the memory. These mechanisms are necessary to ensure data integrity and performance.

The CAV25320YE-GT3 memory is rightly classified as a type of non-volatile memory. Its advanced logic layer and error correction mechanisms make it well-suited for use in automotive embedded applications. Its extended temperature range and multiple logic power supply also make it an ideal choice for reliable operation in extreme environments. Thanks to its efficient design and capacity, this type of memory is well-suited for use in a variety of different embedded applications.

The specific data is subject to PDF, and the above content is for reference

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