| Allicdata Part #: | CAV25M01YE-GT3-ND |
| Manufacturer Part#: |
CAV25M01YE-GT3 |
| Price: | $ 3.24 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ON Semiconductor |
| Short Description: | IC EEPROM 1M SPI 10MHZ 8TSSOP |
| More Detail: | EEPROM Memory IC 1Mb (128K x 8) SPI 10MHz 8-TSSOP |
| DataSheet: |  CAV25M01YE-GT3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 2.94371 |
Specifications
| Series: | Automotive, AEC-Q100 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | EEPROM |
| Technology: | EEPROM |
| Memory Size: | 1Mb (128K x 8) |
| Clock Frequency: | 10MHz |
| Write Cycle Time - Word, Page: | 5ms |
| Memory Interface: | SPI |
| Voltage - Supply: | 2.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
Description
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CAV25M01YE-GT3 Memory Application Field and Working Principle
Memories are a key component of most computing and electronics systems, used to store information for retrieval in the form of data or instructions. The CAV25M01YE-GT3 memory is an integrated memory device designed to provide a high-performance, reliable, and cost-efficient memory solution. The CAV25M01YE-GT3 has application fields in various computing and electronic system, including but not limited to embedded systems, networking systems, automobile systems, and industrial control systems.Architecture and Features
The CAV25M01YE-GT3 memory is an integrated memory device featuring 512M x 8 bit DRAM core design. It is built using a 0.25um manufacturing process and optimized for low power consumption. The device also utilizes an advanced memory controller to provide improved reliability and accelerated operation. The device offers a high operating speed of 125 MHz and features an asynchronous SRAM interface. It has a small-footprint form factor, making it ideal for use in applications that require high density, low power consumption, and low cost.Operating Voltage and Temperature
The CAV25M01YE-GT3 memory operates between a voltage range of 2.6V to 3.4V, and is capable of withstanding -40°C to +125°C temperature ranges. It also features ECC (error correcting code) support and is RoHS compliant.Applications
The CAV25M01YE-GT3 memory is designed to meet the requirements of embedded systems, networking systems, automobile systems, and industrial control systems. The device has a wide range of applications, including but not limited to:- Embedded systems: The CAV25M01YE-GT3 memory has a wide variety of applications in embedded systems, including but not limited to avionics, industrial automation, home automation, and medical devices.
- Networking systems: The device is ideal for use in networking systems, such as routers, switches, gateways, and base stations.
- Automobile systems: The device is particularly suitable for applications that require low power consumption and fast operation, such as Automotive Driver Assistance System (ADAS). Additionally, its temperature range and compact design make it well-suited for in-vehicle electronic systems.
- Industrial control systems: The device is also suitable for use in industrial control systems, such as industrial robots, PLCs, and SCADA systems.
Working Principle
The CAV25M01YE-GT3 memory is designed to provide a high-performance, reliable, and cost-efficient memory solution. It is a combination of a DRAM core, a memory controller, and a memory interface. The device works by allowing data to be written to, or read from, the DRAM core using a memory controller. The memory controller uses an asynchronous SRAM interface to communicate with the memory. The memory controller also monitors and corrects any errors that might occur during the read or write process using its ECC (error correcting code) support. The device also utilizes a low power consumption design to reduce power usage, making it suitable for use in applications that require power efficiency.In conclusion, the CAV25M01YE-GT3 memory is an integrated memory device designed to provide a high-performance, reliable, and cost-efficient memory solution. It is built using advanced technologies and features a low power consumption design, as well as ECC support and a wide temperature range that enables it to be used in various applications, such as embedded systems, networking systems, automobile systems, and industrial control systems. The device works by allowing data to be written to, or read from, the DRAM core using a memory controller, with the memory controller using an asynchronous SRAM interface to communicate with the memory and the ECC support correcting any errors that might occur during the process.The specific data is subject to PDF, and the above content is for reference
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