CAV25512VE-GT3 Allicdata Electronics
Allicdata Part #:

CAV25512VE-GT3-ND

Manufacturer Part#:

CAV25512VE-GT3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 512K SPI 10MHZ 8SOIC
More Detail: EEPROM Memory IC 512Kb (64K x 8) SPI 10MHz 8-SOIC
DataSheet: CAV25512VE-GT3 datasheetCAV25512VE-GT3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CAV25512VE-GT3 is a memory power application in the field of computing and electronics. It is a versatile memory card with a highly efficient architecture and a maximum capacity of 2TB. It is mainly used in high-performance computing and multi-processor systems such as HPC, SAN, DMA, etc. This memory card can be used for data storage, backup and retrieval, as well as remote data communication.

CAV25512VE-GT3 is built using a non-volatile semiconductor memory known as Flash memory. Flash memory is a type of non-volatile memory that can store data even when the power is turned off. This type of memory is suitable for environments where the power is often intermittent or unreliable. Flash memory is also often used in portable devices such as digital cameras, music players and even smart phones and tablets. Flash memory also has the ability to retain its data even if power is disconnected, making it ideal for data storage applications.

The structure of CAV25512VE-GT3 is based on a 3-tier architecture and also contains a voltage regulator, POR controller and temperature sensor. The 3-tier architecture consists of a flash memory array, which is made up of multiple non-volatile devices, and an I/O subsystem, which is divided into a command controller, DMA controller and an interface controller. The flash memory array is the main feature of this memory card and is responsible for storing data and responding to the various command signals that the user sends. The I/O subsystem is responsible for controlling the access and transfer of data between the card and the computer and is responsible for handling the protection and ECC.

The working principle of CAV25512VE-GT3 is based on the process of writing and reading data from the flash memory array. In order to write data to the card, a user must first send a write command, followed by the data and an address. Upon receiving these instructions, the command controller sends the instructions to the DMA controller, which transfers the data from the I/O subsystem to the flash memory array. The flash memory array then writes the data to the address that was provided. In order to read data from the card, the user must similarly send a read command, followed by the address of the data that they want to read. The command controller then sends the instruction to the DMA, which transfers the data from the flash memory array to the I/O subsystem. The data is then returned to the user.

In summary, CAV25512VE-GT3 is a versatile memory card with a high-performance architecture and maximum capacity of 2TB. It is mainly used in multi-processor systems such as HPC, SAN, and DMA, as well as in portable devices such as digital cameras, music players and even smart phones and tablets. The structure of CAV25512VE-GT3 is based on a 3-tier architecture, and it also contains a voltage regulator, POR controller, and temperature sensor. The working principle of this memory card is based on the process of writing and reading data from the flash memory array.

The specific data is subject to PDF, and the above content is for reference

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