| Allicdata Part #: | CAV25256YE-GT3-ND |
| Manufacturer Part#: |
CAV25256YE-GT3 |
| Price: | $ 0.61 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | ON Semiconductor |
| Short Description: | IC EEPROM 256K SPI 10MHZ 8TSSOP |
| More Detail: | EEPROM Memory IC 256Kb (32K x 8) SPI 10MHz 8-TSSO... |
| DataSheet: | CAV25256YE-GT3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.55593 |
| Series: | Automotive, AEC-Q100 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | EEPROM |
| Technology: | EEPROM |
| Memory Size: | 256Kb (32K x 8) |
| Clock Frequency: | 10MHz |
| Write Cycle Time - Word, Page: | 5ms |
| Memory Interface: | SPI |
| Voltage - Supply: | 2.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
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Application Field and Working Principle of CAV25256YE-GT3
CAV25256YE-GT3 is a low power, 256-Kbit asynchronous static random access memory (SRAM) device from California memory devices. This SRAM technology provides both low-voltage operation and high-performance memory, offering a wide range of benefits. As a powerful SRAM, it can be employed in a number of applications, including industrial, automotive, and medical fields.
Features of CAV25256YE-GT3
CAV25256YE-GT3 is an 8-bit word organization SRAM, offering many advanced features. One of the main advantages of this device is the availability of high-speed data response. It also supports an extended temperature range of -40 °C to 125 °C, making it suitable for continuous operation in extreme environments. Other features include asynchronous design characteristics, low active power, and read and write times of just 25ns.
Applications for CAV25256YE-GT3
CAV25256YE-GT3 can be used in a number of applications which require reliable, low-power memories. These include automotive control systems, communications, embedded multimedia control boards, security systems, and industrial control systems. It is also applicable to embedded systems, such as simulation and gaming consoles. In these applications, the SRAM effectively provides fast access to data with high reliability and reduced power consumption.
Working principle of CAV25256YE-GT3
CAV25256YE-GT3 employs a static circuit to store data, eliminating the need for periodic refreshing. This means that data can be stored for long periods without power, reducing the power requirements for the device. It stores 8-bit words and is capable of accessing 250 bytes at its fast access time of 25ns. The write cycle time is greater than 250ns.
The device also features a low-power standby mode, enabling the device to save power while not in use. When the device is not in use, the current level is dropped to just 1.5µA. This provides a reliable source of data with a low current requirement, making the device ideal for applications with battery operation.
Conclusion
CAV25256YE-GT3 is a low-power, 256-Kbit, asynchronous static random access memory (SRAM) device that can be employed in applications where reliable, low-power memory is required. This device offers a range of benefits, including high-speed data response, extended temperature range, asynchronous design characteristics, and low active power. The device is suitable for use in automotive, industrial, and medical applications, along with embedded systems such as gaming consoles and multimedia control boards. Its low power consumption ensures reliable data even in applications where battery operation is necessary.
The specific data is subject to PDF, and the above content is for reference
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CAV25256YE-GT3 Datasheet/PDF