Allicdata Part #: | CAV25640VE-GT3OSTR-ND |
Manufacturer Part#: |
CAV25640VE-GT3 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ON Semiconductor |
Short Description: | IC EEPROM 64K SPI 10MHZ 8SOIC |
More Detail: | EEPROM Memory IC 64Kb (8K x 8) SPI 10MHz 8-SOIC |
DataSheet: | CAV25640VE-GT3 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 64Kb (8K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | CAV25640 |
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Memory: CAV25640VE-GT3 Application Field and Working Principle
Memory is a pervasive component of computing and communication systems, and the CAV25640VE-GT3 is a driving force in the ever increasing demands for greater speed and capacity in the memory landscape. This memory component is a high-speed, high-density, storage-link device for use in net-work servers, storage systems, and embedded processor applications. As the needs for faster systems continue to grow, components like the CAV25640VE-GT3 will be essential in providing the level of performance necessary for today\'s data-intensive applications.
The CAV25640VE-GT3 is a Serial ATA (SATA) 3.0Gbps interface, unbuffered Dual-Inline Memory Module (DIMM). It is available in x8 or x16 configurations, with a maximum of 8GB capacity. It can operate at up to 3.2 GHz in the x8 configuration and up to 6.4 GHz in the x16 mode. The memory can support up to four independent read/write operations per clock cycle, providing a maximum bandwidth of 4GB/s. The module also supports DDR3-1333, DDR3-1600, and DDR3-1866 speed modes.
Design and Architecture
The CAV25640VE-GT3 is based on cutting-edge technology that helps it to deliver higher performance than previous generations of DIMMs. The device is an 8-bit, open-page, single-rank chip that employs a proprietary dual-channel architecture and high-bandwidth memory interface. This memory device is designed for maximum efficiency, allowing for shorter command queues and faster data transfers. In addition, the integrated power distribution and thermal management features can help conserve power in high-traffic or high-load applications.
At the core of the device is a 672-bit complex consisting of 48 data pins, 12 error-correction code (ECC) pins, and 6 register/mode pins. The 672-bit complex can detect and correct up to two single-bit errors, or one double-bit error per access cycle. The CAV25640VE-GT3 also supports an industry-standard self-refresh feature that periodically refreshes the memory contents to a predefined state. This helps to maintain system reliability and can improve the overall performance of the memory module.
Data Transfer
Data transfer in the CAV25640VE-GT3 starts with a read or write command from the host. The command must be 32-bits in length and contain a pointer address and a memory size indicator. Once the command is received, the device will read or write data from its memory array based on the instruction. Data transfers are done in increments of 32-bits and up to 32 bytes per instruction cycle. The maximum transfer rate is 4GB/s.
The CAV25640VE-GT3 also supports two independent channels, allowing simultaneous read and write operations. This makes it possible to access data on both channels at the same time and further improve overall performance. When used in dual-channel configurations, the CAV25640VE-GT3 will deliver a maximum data rate of 8GB/s.
Error Checking and Correction
The CAV25640VE-GT3 offers two types of error checking: parity and ECC. Parity checking is a simple method of detecting a single-bit error, while ECC is a more robust method of detecting and correcting up to two single-bit errors or one double-bit error. ECC works by effectively adding check bits to the original data. In the case of a single-bit error, the additional bit is used to identify and correct the bad bit. For double-bit errors, the CAV25640VE-GT3 will detect the error but not be able to correct it.
Power Consumption
The CAV25640VE-GT3 is a low-power device that can operate at either 1.5V or 1.35V. At 1.35V, it can consume up to 15W. At higher operating temperatures, the device can draw up to 18W. The integrated power management features enable the device to effectively monitor and adjust its power consumption to meet the needs of the application.
Applications
The CAV25640VE-GT3 is particularly suited for use in high-speed and high-density storage applications, such as network servers and storage systems. It is also well-suited for embedded processor applications, such as tablets and smartphones. As a result, it is an ideal solution for applications that demand both speed and capacity.
Conclusion
The CAV25640VE-GT3 is a high-speed and high-density memory device that is designed for use in data-intensive applications. It is available in x8 and x16 configurations, with a maximum capacity of 8GB. The device can support up to four independent read/write operations per clock cycle and is capable of reaching transfer speeds of up to 8GB/s. Its integrated power management and ECC features help to keep power consumption and errors to a minimum. The CAV25640VE-GT3 is well-suited for use in network servers, storage systems, and embedded processor applications and can help to meet the ever-increasing demands for speed and capacity in memory-intensive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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CAV25640VE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 64K SPI 10MHZ 8... |
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CAV25010VE-GT3 | ON Semicondu... | 0.22 $ | 1000 | IC EEPROM 1K SPI 10MHZ 8S... |
CAV25010YE-GT3 | ON Semicondu... | 0.22 $ | 1000 | IC EEPROM 1K SPI 10MHZ 8T... |
CAV24C16WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 16K I2C 400KHZ ... |
CAV24C16YE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 16K I2C 400KHZ ... |
CAV24C64WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 64K I2C 400KHZ ... |
CAV24C64YE-GT3 | ON Semicondu... | 0.48 $ | 2991 | IC EEPROM 64KB I2C 400KHZ... |
CAV24C256WE-GT3 | ON Semicondu... | 0.47 $ | 1000 | IC EEPROM 256K I2C 1MHZ 8... |
CAV25128VE-GT3 | ON Semicondu... | -- | 1722 | IC EEPROM 128K SPI 10MHZ ... |
CAV25160VE-GT3 | ON Semicondu... | 0.34 $ | 1000 | IC EEPROM 16K SPI 20MHZ 8... |
CAV25160YE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 16K SPI 20MHZ 8... |
CAV24C02YE-GT3 | ON Semicondu... | -- | 3000 | IC EEPROM 2K I2C 400KHZ 8... |
CAV24C32YE-GT3 | ON Semicondu... | 0.25 $ | 3000 | IC EEPROM 32K I2C 400KHZ ... |
CAV25080VE-GT3 | ON Semicondu... | -- | 3000 | IC EEPROM 8K SPI 20MHZ 8S... |
CAV25320VE-GT3 | ON Semicondu... | -- | 3000 | IC EEPROM 32K SPI 10MHZ 8... |
CAV24C128WE-GT3 | ON Semicondu... | -- | 3000 | IC EEPROM 128K I2C 1MHZ 8... |
CAV24C128YE-GT3 | ON Semicondu... | 0.36 $ | 3000 | IC EEPROM 128K I2C 1MHZ 8... |
CAV24C512WE-GT3 | ON Semicondu... | -- | 3000 | IC EEPROM 512K I2C 1MHZ 8... |
CAV25320YE-GT3 | ON Semicondu... | 0.35 $ | 1000 | IC EEPROM 32K SPI 10MHZ 8... |
CAV25640YE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 64K SPI 10MHZ 8... |
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CAV25128YE-GT3 | ON Semicondu... | 0.54 $ | 1000 | IC EEPROM 128K SPI 10MHZ ... |
CAV25256VE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 256K SPI 10MHZ ... |
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CAV24C02WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 2K I2C 400KHZ 8... |
CAV24C04YE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 4K I2C 400KHZ 8... |
CAV24C08WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 8K I2C 400KHZ 8... |
CAV24C04WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 4K I2C 400KHZ 8... |
CAV24C32WE-GT3 | ON Semicondu... | -- | 1000 | IC EEPROM 32K I2C 400KHZ ... |
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