CDBD20150-HF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io) (per Diode):	20A (DC)
Voltage - Forward (Vf) (Max) @ If:	1V @ 10A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	500µA @ 150V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK

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Introduction

The CDBD20150-HF application field and working principle are specifically designed for the applications in the medium power rectification sector and are suitable for both functional and physical reliability. The CDBD20150-HF is a high frequency CMOS rectifying bridge array composed of two identical Bypass Diode cells. This rectifying bridge array supports two operating modes, Forward and Switching, which allow it to deliver the highest performance and functionality possible in any non-isolated medium power rectification application.

Applications

CDBD20150-HF is capable of providing an output current range from 1A to 5A and an ideal rectified voltage rating of up to 400V. It is suitable for rectifying up to 40 Vac, is rated up to a peak forward current of >8A, and has a maximum DC current of 1.6Arms and a no-load voltage of 4V. There are a variety of applications for the CDBD20150-HF rectification, which is made up of two identical Bypass Diode cells. Applications include but are not limited to AC/DC conversion, high frequency rectification, and buck, boost, and flyback convertors. The device offers high efficiency, high surge current capability, excellent thermal stability, and wide operating temperature range.

Design

The robust design of the CDBD20150-HF allows for operation up to 65°C in junction temperatures and up to 100°C in case temperature. The rectifying bridge array is based on an innovative Low Threshold CMOS technology optimized for moderate temperature and high-voltage operating conditions. It is based on a high-frequency CMOS technology with high-speed switching, low gate-charge Qg, and low switching jitter. The rectifying bridge array is further shielded using a four-terminal compensation scheme. The two Bypass Diode cells are arranged in series and perform the same function.

Function

The CDBD20150-HF operates in a forward or switching mode, depending on the applied voltage. The forward mode applies when the applied voltage is less than the "boost" voltage, and in this mode the device behaves like an ideal diode. The switching mode is triggered when the voltage exceeds the "boost" voltage, and in this mode the device switches from its forward state to a conducting state, and between conducting states. This allows for a wide variety of output voltages, according to the applied voltage. The device also features a low RDSon for high efficiency, as well as a high switching speed for high frequency.

Conclusion

The CDBD20150-HF application field and working principle make it an ideal solution for applications requiring a medium power rectification. The device offers excellent thermal and physical reliability with a high frequency CMOS technology and four terminal compensation scheme, while operating with up to 65°C in junction temperature and up to 100°C in case temperature. The two independent Bypass Diode cells provide flexibility and allow for a wide variety of output voltages according to the applied voltage. The device is rated up to 8 A peak forward current, with a maximum DC current of 1.6A and a no-load voltage of 4V.

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