Allicdata Part #: | CDBD2080-G-ND |
Manufacturer Part#: |
CDBD2080-G |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ARRAY SCHOTTKY 80V D2PAK |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 80V 20A... |
DataSheet: | CDBD2080-G Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.45461 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 20A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 850mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 80V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
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CDBD2080-G is a high performance N-Channel Enhancement Mode MOSFET that provide superior switching performance in comparison to other technologies and offer a low on-resistance with a multitude of current handling capabilities. The CDBD2080-G is an array of four internally connected 30V N-Channel MOSFETs in a 4-pin SMPD package. It is a low voltage device that provides excellent current handling capabilities and a high level of thermal performance. It is ideal for use in a wide range of DC/DC and AC/DC switching applications.
The CDBD2080-G is designed for use in low voltage applications, such as DC-DC converters, power supplies, and power management circuits. The CDBD2080-G can be used in high voltage differential line drivers and as switching FETs in pulse width modulation (PWM) control circuits. This device also has an on-resistance that is considerably lower than traditional switching FETs. It is rated at 30V and offers a drain current of 13A.
CDBD2080-G has an advanced design to maximize the drain current handling capability and power dissipation. Its internal structure consists of two discrete DMOS FETs in parallel and two in series. Each pair of series FETs is connected between gate and source, with the drain being connected to the package. This configuration allows for a lower on-resistance, more power dissipation, and faster switching times. The result is improved current handling and a higher heat dissipation rate.
The working principle of the CDBD2080-G is based on its structure. When voltage is applied to the gate of the MOSFET, the channel between the source and drain is opened, allowing current to flow from the source to the drain. The on-resistance of the CDBD2080-G is low compared to other technologies, making it well suited for high current switching applications. The drain-source resistance also helps to reduce power consumption and helps protect sensitive circuitry from electrostatic damage.
The CDBD2080-G is a versatile device that can be used in a wide variety of applications. It can be used to provide low on-resistance switches in DC/DC and AC/DC switching applications, as well as to drive high current differential lines or regulate switching speed in PWM devices. It is also well suited for DC current sensing and voltage level detection applications.
In conclusion, the CDBD2080-G is a versatile and reliable device that is particularly well suited for high current switching applications. Its advanced design offers low on-resistance and reliable thermal performance, making it an ideal choice for a wide range of applications. With its versatility and durability, the CDBD2080-G is an excellent choice for a variety of switching and control applications.
The specific data is subject to PDF, and the above content is for reference
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