CDBDSC5650-G Allicdata Electronics
Allicdata Part #:

641-1931-ND

Manufacturer Part#:

CDBDSC5650-G

Price: $ 1.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE SILICON CARBIDE POWER SCHO
More Detail: Diode Silicon Carbide Schottky 650V 21.5A (DC) Sur...
DataSheet: CDBDSC5650-G datasheetCDBDSC5650-G Datasheet/PDF
Quantity: 466
1 +: $ 1.41750
10 +: $ 1.27827
80 +: $ 1.14108
160 +: $ 1.02698
320 +: $ 0.91287
560 +: $ 0.79876
1040 +: $ 0.66183
2560 +: $ 0.61618
5040 +: $ 0.60858
Stock 466Can Ship Immediately
$ 1.58
Specifications
Series: --
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 21.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes are electronic components that allow current to flow in one direction but block current from flowing in the other direction. CDBDSC5650-G is a single rectifier diode, equipped with standard 0.65mm SMT package. The device is the Schottky barrier type, which provides ultra-low forward voltage drop and fast switching speed. It has a maximum repetitive reverse voltage of 55V, and a maximum DC blocking voltage of 60V.

CDBDSC5650-G is typically used in applications that require low forward voltage, fast switching and low reverse leakage. This device can be found in numerous power systems, such as automotive applications, server power supplies, power converters and motor drives. It is also suitable for DC-DC converters, voltage monitoring systems and protection circuits.

The working principle of CDBDSC5650-G is based on the Schottky barrier rectifier. It works by forming a forward-biased junction between its anode and cathode, allowing current to flow freely in one direction and blocking current from flowing in the opposite direction. In addition, the diode also has a reverse-biased junction, which prevents the current from flowing in the reverse direction and also has a relatively low leakage current compared to other types of diodes.

In conclusion, CDBDSC5650-G is a single rectifier diode with a standard 0.65mm SMT package. This device has a maximum repetitive reverse voltage of 55V, and a maximum DC blocking voltage of 60V. It is used in applications that require low forward voltage, fast switching and low reverse leakage. The working principle of CDBDSC5650-G is based on the Schottky barrier rectifier, which works by forming a forward-biased junction between its anode and cathode, allowing current to flow freely in one direction and blocking current from flowing in the other.

The specific data is subject to PDF, and the above content is for reference

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