CDLL4702

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	15V
Tolerance:	±5%
Power - Max:	500mW
Current - Reverse Leakage @ Vr:	50nA @ 11.4V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AB, MELF
Supplier Device Package:	DO-213AB

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CDLL4702 is a single zener diode specifically designed for use in ESD protection applications. Commonly used in consumer electronics, it is capable of safely dissipating up to 8kV of electrostatic discharge energy without suffering significant damage. A zener diode is a two terminal semiconductor device constructed from a lightly doped p-n junction. When a reverse bias voltage is applied across the p-n junction, it will cause electrons and holes to be drifted from their original positions and ultimately form a depletion region. This process creates an electric field that limits the current, allowing the diode to regulate the voltage to a specified voltage. The CDLL4702 is designed to overcome the drawbacks of other ESD protection diodes. It is the only single zener diode available with an 8kV ESD protection level and an ultra-low 10A leakage current over a wide temperature range. This makes the CDLL4702 the ideal choice for applications where ultra-low power consumption and extremely high ESD protection is desired. The CDLL4702 is highly versatile and can be used in a wide range of ESD protection applications, ranging from consumer electronics and peripherals to industrial, medical and automotive parts. It is expensive, however the high electrostatic discharge protection level and low power consumption make it well suited for even the most extreme environments. The CDLL4702 is composed of two main components, the N-type epitaxial layer and the P-type drift layer. The N-type epitaxial layer is doped with donor atoms which form a majority of electron carriers. The P-type drift layer contains impurities which provide extra space for the electrons to drift. This causes the depletion region to form and results in a potential barrier which restricts the current flow. When a reverse bias voltage is applied to the CDLL4702, electrons will be drifted out of the N-type epitaxial layer and into the P-type drift layer, creating the depletion region. The depletion region acts as an insulator, preventing the current from increasing above the breakdown or “zener” voltage. This ensures that the voltage across the diode stays constant, regardless of the current flow.When a voltage transient or ESD strike occurs, the CDLL4702 will absorb the energy and limit it to a safe level. It is designed to withstand 8kV of electrostatic discharge per line with a peak current rating of 10A. The special design of the CDLL4702 also allows it to maintain a very low 10A leakage current, reducing power consumption and saving energy.In summary, the CDLL4702 is a single zener diode specifically designed for use in ESD protection applications. It is the only diode available with an 8kV ESD protection level and an ultra-low 10A leakage current over a wide temperature range. This makes it ideal for use in a variety of ESD protection applications such as consumer electronics, industrial, medical and automotive parts. The CDLL4702 is designed to absorb the energy from transients and ESD strikes and limit it to a safe level. It can withstand 8kV of electrostatic discharge per line and has a peak current rating of 10A, making it an efficient and cost-effective choice for ESD protection.

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