CDLL5951B

The CDLL5951B is a single zener diode that has a wide range of applications and features.

This single zener diode is a silicon controlled rectifier that is ideally suited for the application fields of power supply regulation and protection, energy management, and industrial and medical applications. This diode is available in TO-202, TO-204AA, and DO-214AA packages. The CDLL5951B is also available in a variety of voltages.

The CDLL5951B has a typical forward voltage drop of 0.45V at 2.5A and an operation temperature of -55 to +150˚C. This diode has a steady-state reverse voltage of 17V and a pulsed reverse voltage of 25V. With a reverse current of 10µA and reverse voltage of 2V, the CDLL5951B also has a maximum power dissipation of 400mW.

The working principle of the CDLL5951B is relatively simple. This single zener diode utilizes a forward voltage drop to break open the PN junction. This causes a reverse current flow and results in a localized electric field. As the voltage across the diode increases, the electric field increases. When the voltage reaches the zener voltage of the diode (in the case of the CDLL5951B, 17V), the electric field breaks down the PN junction. This allows a current flow through the diode in the opposite direction, resulting in an avalanche breakdown.

In addition to these features, the CDLL5951B also features a low reverse current, which helps to reduce power consumption. This is an important feature, especially for industrial and medical applications where power consumption is critical. The CDLL5951B also has a wide temperature range, making it suitable for a variety of applications.

In summary, the CDLL5951B is a single zener diode that offers a wide range of applications and features. It has a forward voltage drop of 0.45V at 2.5A, a reverse voltage of 17V, and a reverse current of 10µA. It also has a maximum power dissipation of 400mW and a wide temperature range. The working principle of this diode utilizes a forward voltage drop to break open the PN junction, resulting in an avalanche breakdown at the zener voltage of the diode.