CLF1G0035S-100,112

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CLF1G0035S-100,112 is a type of semiconductor device, known as a Field Effect Transistor (FET). FETs derive their name from their capacity to manipulate the flow of electricity on a conductive material, such as a metal or a semiconductor. In this case, the FET is of the MOSFET type, meaning Metal Oxide Semiconductor Field Effect Transistor.

MOSFETs are widely used in Radio Frequency (RF) applications. They are specifically designed to handle smaller currents and higher frequencies than with standard Discrete FET devices. MOSFETs also have advantages when compared to standard Bipolar Junction Transistors (BJTs). Specifically, MOSFETs are much smaller, lighter, and have much lower impedance. This makes them much more reliable and cost-effective for RF applications.

The CLF1G0035S-100,112 is a specific n-channel MOSFET, meaning it has an n-type conduction channel. This refers to the material that is used to form the channel, which is typically Silicon. In this particular device, the Silicon has been doped with a combination of Boron and Arsenic. This creates a negative type of conduction, which is ideal for RF applications.

The exact field of application for the CLF1G0035S-100,112 is in high power semiconductor switch mode power supplies and other linear amplifier applications. It is designed to be used in high power applications, up to 400 watts of power. It features a low gate threshold voltage, making it ideal for switching applications. It is capable of switching frequencies up to 100kHz, and it has a low on-state resistance, meaning it is capable of reliably switching high power loads.

The working principle of the CLF1G0035S-100,112 is based on the charge-controlled conduction of photons and electrons through the MOSFET\'s n-type conduction channel. When a voltage is applied to the gate of the device, electrons, or their holes, form an inversion layer of charge. This creates a conducting channel between the source and drain terminals. The channel width and depth can be controlled simply by varying the gate voltage, thus controlling the current that flows between the source and drain.

The CLF1G0035S-100,112 is a specific type of semiconductor device, specifically designed for high power radio frequency applications. It is an n-type MOSFET, meaning it has an n-type conduction channel, which is used to control the flow of electrons or their holes, based on charge-controlled conduction. It is ideal for switching applications up to 400 watts of power, with a low gate threshold voltage and a low on-state resistance.

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