CMLT3820G TR Discrete Semiconductor Products |
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Allicdata Part #: | CMLT3820GTR-ND |
Manufacturer Part#: |
CMLT3820G TR |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 60V 1A SOT563 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 150MHz 250mW S... |
DataSheet: | CMLT3820G TR Datasheet/PDF |
Quantity: | 21000 |
3000 +: | $ 0.14765 |
6000 +: | $ 0.13812 |
15000 +: | $ 0.12860 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 280mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The CMLT3820G TR is a single bipolar junction transistor (BJT) and is mainly used in radio frequency (RF) applications operating in the frequency range of 500 kHz to 4 GHz. It is a switching transistor, which means it can be used to switch current in an electronic circuit. This makes it ideal for applications such as antenna switches, RF switches, attenuators, and RF amplifiers. The CMLT3820G TR has a single layer of N-type diffusion and a bipolar collector which provides higher gain and better frequency response.
The CMLT3820G TR is very popular in radio frequency applications because of its low on-resistance and its broadband compatibility. Its low on-resistance makes it a good choice for switching devices and its broadband compatibility allows it to be used over a wide range of frequencies. The transistor has very low turn on voltage, low saturation current, and high switching speed.
The working principle of the transistor is based on the flow of electrons between the base and collector. The base supplies electrons to the collector regions and the collector emits electrons to the base. When this process takes place, the current flow between the emitter and collector changes and this causes the voltage to drop. The voltage drop causes the transistor to turn on and this allows current to flow between the emitter and collector. When the transistor is in the off state, no current will flow between the emitter and collector and the voltage between the emitter and collector will be at its saturation level.
The CMLT3820G TR is designed for use in high frequency applications. It is a versatile device and can be used in many applications. It has a low threshold voltage and its low on-resistance makes it a good choice for switching and amplifier applications. It has a broadband capability and can be used in antenna switches, attenuators, and RF amplifiers.
The CMLT3820G TR is an essential component for many high frequency applications. It has a low on-resistance and it is designed for a wide range of applications. It offers low current consumption, low voltage drop and high frequency response. It is a reliable component and is suitable for use in many applications. It can be used in antenna switches, RF switches, attenuators and RF amplifiers.
The specific data is subject to PDF, and the above content is for reference
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