CMLT3906EG TR Allicdata Electronics

CMLT3906EG TR Discrete Semiconductor Products

Allicdata Part #:

CMLT3906EGTR-ND

Manufacturer Part#:

CMLT3906EG TR

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2PNP 40V 0.2A SOT563
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 20...
DataSheet: CMLT3906EG TR datasheetCMLT3906EG TR Datasheet/PDF
Quantity: 9000
3000 +: $ 0.16306
6000 +: $ 0.15182
15000 +: $ 0.14994
Stock 9000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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CMLT3906EG TR is a type of bipolar junction transistor, or BJT, array. This device is a transistor that consists of multiple BJT transistors of the same type connected together. It is typically used in applications where multiple transistors are needed in a single package. The CMLT3906EG TR is designed to handle high frequencies and switching applications. It is also designed to have a low power dissipation and can be used in applications where low power consumption is desired.

The CMLT3906EG TR has four separate transistors, each with its own collector, emitter and base (C-E-B) connection. It has a collector-emitter voltage of up to 30 volts, which makes it suitable for use in high-voltage applications. It also has a base current of up to 15mA, and a power dissipation of up to 300W. The CMLT3906EG TR is typically made from silicon and aluminum, but other materials can be used as well.

In terms of its working principle, the CMLT3906EG TR is similar to other BJT transistors. In a BJT transistor, electrical current flows from the base to the collector when the base voltage is higher than the emitter voltage. This occurs because the base-emitter junction is forward biased and the collector-emitter junction is reverse biased. In the CMLT3906EG TR, the four transistors are connected in a series configuration. This allows current to flow through the four transistors in a sequential manner when the base voltage is higher than the emitter voltage. This can be used to drive multiple circuits.

The CMLT3906EG TR can be used in a wide range of applications. It is commonly used in power supplies, where it is used to regulate the output voltage; audio amplifiers, where it is used to increase the volume; and logic circuits, where it is used to switch between two logic states. The CMLT3906EG TR is also used in radio transmitters and receivers, where it is used to amplify the signals sent and received. Additionally, the CMLT3906EG TR can be used in a variety of industrial and automotive applications.

The CMLT3906EG TR is a versatile and powerful BJT array that can be used in many different applications. Its low power dissipation and high switching speed make it an attractive option for many demanding applications. It is also easy to use and can be connected in a variety of different configurations to meet the requirements of the application.

The specific data is subject to PDF, and the above content is for reference

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