CMLT5551 TR Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	160V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	350mW
Frequency - Transition:	300MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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The CMLT5551 TR is a state-of-the-art, highly reliable, bipolar junction transistor (BJT) array designed to meet the most demanding application requirements. It features exceptionally high input/output radio frequency (RF) isolation and a very low input bias current. It is commonly used in a variety of applications, including receivers, comparators, phase locked loops (PLLs), clock and data recovery circuits, and RF switching. The CMLT5551 TR is based on a common emitter (CE) feedback configuration and operates as a common source amplifier. It features an open emitter design that eliminates electro-thermal related bias instability. This allows for extremely high input/output isolation and a very low input bias current. This device also offers excellent power output and low noise performance. The CMLT5551 TR has multiple internal gain stages configured in a cascode configuration. This allows the device to have a very low input bias current and a high level of input/output isolation. Additionally, the gain is adjustable using external components. This feature allows designers to optimize the device’s performance for their application. The CMLT5551 TR also has a wide operating temperature range, up to 125°C. This allows for extended operating life and improved robustness in harsh environments. Additionally, the device boasts an impressive quiescent current of just 130μA. The CMLT5551 TR has a wide range of applications. Its high-frequency performance and high-power capability make it ideal for RF switching and point-to-point applications. Additionally, it can be used in circuits such as receivers, comparators, phase locked loops (PLLs), clock and data recovery circuits, power dividers, limiters, mixers, and frequency discriminators. The working principle of the CMLT5551 TR is straightforward. The device consists of multiple NPN transistors configured in a cascode amplifier that are typically biased with a negative voltage relative to the supply voltage. The cascode design allows for extremely low input bias current, high input/output isolation, and adjustable gain using external components. In order to use the CMLT5551 TR, it must be connected to an appropriate power supply and external components. The device is then biased using an external resistor network and stabilized using negative feedback. The external components can be adjusted to modify the device’s gain and input/output isolation. Additionally, the bias voltage and external feedback networks can be adjusted to optimize the device’s performance. In summary, the CMLT5551 TR is a state-of-the-art, highly reliable, bipolar transistor array designed to meet the most demanding application requirements. It is based on a common emitter (CE) feedback configuration and operates as a common source amplifier. Its wide range of features and high-frequency performance make it ideal for RF switching and point-to-point applications. Its open emitter design and external gain adjustment capabilities allow designers to optimize the device’s performance to best meet their requirements.

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