CMLT7820G TR Allicdata Electronics

CMLT7820G TR Discrete Semiconductor Products

Allicdata Part #:

CMLT7820GTR-ND

Manufacturer Part#:

CMLT7820G TR

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 60V 1A SOT563
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 150MHz 250mW S...
DataSheet: CMLT7820G TR datasheetCMLT7820G TR Datasheet/PDF
Quantity: 15000
3000 +: $ 0.14765
6000 +: $ 0.13812
15000 +: $ 0.12860
Stock 15000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 250mW
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The CMLT7820G TR is a single bipolar junction transistor (BJT) designed for a wide range of uses. This transistor is part of the Planar range and is designed to provide high switching and amplification, making it useful in many applications. It has an operating voltage range of 15V - 40V and a current gain (hFE) of 160-450.

The CMLT7820G TR is suitable for many applications, from power drivers and lighting controllers, to linear and switching amplifiers. Its high switching speed, low saturation voltage and high current gain make it ideal for power drivers, and its low junction capacitance makes it suitable for use in high frequency applications.

In terms of linear amplification, the CMLT7820G TR is widely used for powering audio and light applications. The high current gain of the transistor makes it suitable for high fidelity amplifiers, with the low power dissipation ensuring a clean and efficient sound.

For industrial purposes, the CMLT7820G TR is widely used in field-effect transistors and other switch applications. The high current gain and switching speed make it ideal for applications where precise and rapid switching is required. The low power dissipation makes it useful in low-power electronic applications.

The CMLT7820G TR\'s working principle is straightforward. It consists of two p-type and n-type substrate regions, with a thin layer of metal between them. When a current is applied across the substrate, a voltage is created across the metal layer. This voltage can be used to switch on and off the transistor. When the transistor is switched on, it provides a high current gain.

When designing systems with the CMLT7820G TR, careful consideration must be given to the levels of voltage and current circulating through the device. Insufficient voltage can lead to the transistor failing, while too much current can cause excessive power dissipation and damage to the device. In order to ensure reliability and operability, manufacturers often supply a guide for the recommended voltage and current levels for the device.

The CMLT7820G TR is a versatile and highly reliable single bipolar junction transistor, ideal for a wide range of applications. Its low saturation voltage and high current gain make it ideal for power drivers and other electronic systems. Its high switching speed and low power dissipation make it suitable for a range of switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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