CMPTH81 TR Discrete Semiconductor Products |
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| Allicdata Part #: | CMPTH81TR-ND |
| Manufacturer Part#: |
CMPTH81 TR |
| Price: | $ 0.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Central Semiconductor Corp |
| Short Description: | TRANS PNP 20V 50MA SOT23 |
| More Detail: | RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mo... |
| DataSheet: |  CMPTH81 TR Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.27783 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Last Time Buy |
| Transistor Type: | PNP |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Frequency - Transition: | 600MHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | -- |
| Power - Max: | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
| Current - Collector (Ic) (Max): | 50mA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
Description
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CMPTH81 TR is a type of transistor which falls within the bipolar junction transistor (BJT) used mainly in radio frequency (RF) applications. The CMPTH81 TR is a three-terminal device with a base, collector, and emitter. It is a current-controlled current device, meaning that it has a certain amount of current flowing through it that is controlled by another current “input” signal. This allows the CMPTH81 TR to be used to amplify a signal before being sent to an RF device. In essence, it acts as an electronic circuit that has gain.In terms of its working principle, the CMPTH81 TR is an NPN transistor, with one P-type and two N-type materials forming the three regions. By applying a bias voltage to the base-collector junction, the resistance between the collector and the base changes depending on the magnitude of the voltage and the current flowing through it. This current that is necessary to control the device is called the base current. When the base current increases, current instead flows from the collector to the emitter of the CMPTH81 TR, rather than from the collector to the base.The CMPTH81 TR is a current controlled device, meaning that the amount of current that can flow from the collector to the emitter is directly proportional to the current flowing through the base. This means that by controlling the base current, one can control the amount of current that flows between the collector and the emitter, and hence the magnitude of the amplified signal.Looking more closely at the construction of the CMPTH81 TR, it is made up of P-type material underneath the emitter terminal which acts as the base of the device, N-type material to the sides of the base in order to form the collector terminals, and N-type material on top of the base in order to form the emitter consequently.In terms of its practical applications, these transistors can be used for a range of purposes but are especially useful for RF applications. In RF applications, CMPTH81 TR transistors are used as amplifiers and signal modulators, where they are used to take in a signal at low power and increase its power so that the signal can be amplified further, or to adjust a signal to the desired frequency.The CMPTH81 TR is also particularly useful when it comes to designing filters, as it can be used to create a high-Q response and filter out unwanted frequencies from the signal. This can help to reduce the amount of noise in a signal, and the signal can be better received and interpreted by the receiving device.Aside from its uses in RF applications, the CMPTH81 TR can also be used as a voltage switcher or comparator, as the resistance between the collector and the base can be altered to allow the transistor to switch on or off depending on the voltage level provided.Overall, the CMPTH81 TR is an essential component of RF design, as its characteristics make it an ideal candidate for amplifying, modulating and filtering frequencies in high-frequency applications. While other types of transistors may work, the CMPTH81 TR offers high-performance and uniquely tailored characteristics for RF applications.<\span><\div>
The specific data is subject to PDF, and the above content is for reference
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