CMPT2369 TR Allicdata Electronics

CMPT2369 TR Discrete Semiconductor Products

Allicdata Part #:

CMPT2369TR-ND

Manufacturer Part#:

CMPT2369 TR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 15V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 15V 500mA 500MHz 350m...
DataSheet: CMPT2369 TR datasheetCMPT2369 TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07094
6000 +: $ 0.06665
15000 +: $ 0.06234
30000 +: $ 0.05733
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 500MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Bipolar junction transistors (BJTs) are three terminal semiconductor devices used for controlling electric current flow and are one of the main components of electronic circuits. They can be found in many different forms, but the most commonly used is the single BJT, also known as the BJT transistor. The single BJT transistor has two distinct modes of operation, the amplification and the switching. In the amplification mode, the transistor is used to amplify a weak signal into a larger one, while in the switching mode, it is used to turn current on or off at specific times.

The single BJT transistor is composed of three different regions of semiconductor material, namely the base, the collector and the emitter. The base of the transistor is the control terminal, and applied voltage determines the circuit’s output. The collector is where the amplified current leaves and the emitter is where it returns. When the base of a single BJT transistor receives a voltage signal, it changes the flow of electrons across the collector and the emitter region, producing a current at the collector. This current is known as the collector current. The current flowing across the collector and emitter can be regulated by varying the voltage applied to the base.

The single BJT transistor has the ability to amplify a current, due to the recombination of electrons and holes occurring in the base-emitter junction. The gain of the transistor is dependent on the current ratio between collector and emitter current, and is usually denoted by the symbol (h_FE). The h_FE coefficient is determined by using a voltage divider network connected to the base and collector terminals of the transistor.

In addition to its use in amplification, the single BJT transistor is also used to control switches in electronic circuits. When the base voltage is low, the transistor is in the "OFF" state and no current will flow through the collector and emitter. When the base voltage is increased, electrons and holes recombine and the transistor moves into the "ON" state, allowing a current to flow across the collector and emitter. This transistor switching process allows for greater functionality and precision.

The single BJT transistor is used in a variety of electronic applications such as amplifier circuits, switching circuits, voltage regulators and motor control circuits. It is also used in projects requiring control of servo motors and stepper motors, radio frequency (RF) signal amplification and high frequency switching applications. The CMPT2369 TR is an integrated circuit containing a single BJT transistor, along with the associated emitter-resistor, base-resistor and base bias-resistor. It is used in circuits requiring amplification and transistor switching applications.

The working principle of a single BJT transistor is relatively simple. It consists of three terminals: base, collector and emitter. When a small voltage is applied to the base of the transistor, it forms an electrical field between the base and the collector. This field allows electrons from the emitter to flow from the base to the collector and back to the emitter in an amplified current.

When the base voltage is increased or decreased, the transistor’s collector-emitter current also changes inversely, causing the input voltage signal to be amplified according to the h_(FE) gain of the transistor. The CMPT2369 TR circuit includes resistors to prevent deleterious spike currents from consuming power from its environment. The resistors are also used to bias the base of the transistor, which allows for a smaller voltage signal to turn it “ON”.

The single BJT transistor is a versatile component, allowing engineers to produce numerous existing products and future technologies. Its many applications include the amplification of weak signals, controlling the on/off state of switches in circuits, controlling current flow and operating servo motors. The CMPT2369 TR is a dedicated integrated circuit that allows engineers to implement a single BJT transistor and associated components into their designs in an orderly, efficient manner.

The specific data is subject to PDF, and the above content is for reference

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