CMPTA64 TR Allicdata Electronics
Allicdata Part #:

CMPTA64TR-ND

Manufacturer Part#:

CMPTA64 TR

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP DARL 30V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: CMPTA64 TR datasheetCMPTA64 TR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09168
6000 +: $ 0.08613
15000 +: $ 0.08057
30000 +: $ 0.07409
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The CMPT64 TR application field and its working principle is a transistor that belongs to the family of single bipolar junction transistors (BJT). This kind of transistor is an electrically controlled current or voltage linker. It comes with two statements, one controlling the other. The BJT consists of three terminals known as the emitter, collector and base.

The CMPT64 TR application field uses a base-collector or emitter-collector combination that creates the intrinsic BJT action. The bipolar junction transistor provides the control of low-level signals and dynamic resistance of high-level currents between the collector and the base. It also has high operating temperature range from -55 to 150°C, excellent breakdown voltage, and is often used for switching and amplification.

The working principle of the CMPT64 TR application field is its use of the base current and collector current. An externally applied potential difference between the base and the emitter causes of the injected minority carrier current to flow from the emitter to the base. This current flow happens in reverse direction of the conventional current. The external potential difference – the base-emitter voltage – causes current charges to flow in the collector circuit.

The operation of the CMPT64 TR application field can be increased by applying a reverse bias voltage between the collector and the base. The amount of current flowing through the collector of the transistor is directly proportional to the amount of current that is being supplied to the base circuit. This phenomenon is known as “current gain” and it amplifies the input signal applied to the base. The collector current will also depend on the type of transistor used.

CMPT64 TR application field is mainly used in RF circuits, amplifier circuits and oscillators. It is also used in the switching circuits. In RF circuits, it is used for high-frequency signal amplification and control, such as in antennas and power dividers. It is used in amplifier circuits to control the current supply to the amplifier, improving the amplification factor. In oscillators, it is used to generate stable oscillations and in switching circuits, it is used to connect two points in an electric circuit or to disconnect them.

The advantage of using a CMPT64 TR application field is its high operational temperature range. This range allows the device to operate in harsher environments than conventional transistors. Also, the breakdown voltage ensures that it can be used in high-voltage circuits without fear of breakdown. The use of the collector current-base current control reinforces the low-level signal control and dynamic resistance for high current amplification.

The CMPT64 TR application field is a reliable and highly versatile device. Its low-level signal and dynamic resistance control are ideal for situations where a precise and precise control is required. It can be used for both switching and amplification, making it a great choice for many applications. Its high temperature range and breakdown voltage increase its utility and make it one of the most popular transistors in the market.

The specific data is subject to PDF, and the above content is for reference

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