CMPT5401E TR Allicdata Electronics
Allicdata Part #:

CMPT5401ETR-ND

Manufacturer Part#:

CMPT5401E TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP
More Detail: Bipolar (BJT) Transistor PNP 220V 600mA 300MHz 350...
DataSheet: CMPT5401E TR datasheetCMPT5401E TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 220V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 350mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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CMPT5401E TR is a widely used NPN Epitaxial silicon planar bipolar transistor. It is widely used in various applications due to its high frequency operations, high gain, good isolation and low power dissipation.The CMPT5401E TR offers excellent electrical characteristics such as high switching speeds, low on-resistance, and low gate leakage. It exhibits a high operating temperature range up to 150°C, suitable for high temperature environments. This transistor is also well suited for use in power electronic devices, power switching, and very low voltage circuits.The CMPT5401E TR works on the principle of a bipolar junction transistor (BJT). A BJT is an active three-electrode device consisting of two p-n junctions separated by a narrow region. One of the p-n junctions, called the base-collector p-n junction, is used to control the current flow through the transistor and determines the gain of the transistor. The other p-n junction, called the base-emitter p-n junction, is used to control the current between the collector and the emitter. When a current is applied across the base-emitter junction, the base-collector junction is forward biased and the transistor is ON. When the base-emitter junction is reverse biased, the base-collector junction is reverse biased and the transistor is OFF.The CMPT5401E TR is designed for general purpose switching applications and is used in low to medium power switching operations. It is ideal for use in switch mode power applications, OR gates, AND gates, level translators and voltage-controlled switches. The CMPT5401E TR also makes an ideal companion transistor for logic IC interfacing applications. It is also popularly used in AF radio applications where it exhibits superior noise suppression characteristics.The CMPT5401E TR features a copper plated solderable metal tab for easy mounting. The transistor also has an integral metal tab connected to the emitter that aids in isolation and thermal dissipation. This metal tab can also be used as a ground reference in some applications.The CMPT5401E TR is employed in various low-power applications, such as logic gates, relay drivers, audio amplifiers, optocouplers, and ADC or DAC interfacing. The transistors offer superior performance in low-power switching and high-frequency oscillator applications due to their high gain and low on-resistance.In summary, CMPT5401E TR is a widely used NPN Epitaxial silicon planar bipolar transistor. It has a variety of applications due to its excellent electrical characteristics, high frequency operation, high gain and good isolation. Its integral metal tab helps in thermal dissipation and can be used as a ground reference in some applications. The CMPT5401E TR is widely used for low-power switching and high frequency oscillator applications and is gaining ground in audio amplifier, optocoupler and ADC/DAC interfacing as well.

The specific data is subject to PDF, and the above content is for reference

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