CMPT8599 TR Allicdata Electronics

CMPT8599 TR Discrete Semiconductor Products

Allicdata Part #:

CMPT8599TR-ND

Manufacturer Part#:

CMPT8599 TR

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 80V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 350m...
DataSheet: CMPT8599 TR datasheetCMPT8599 TR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09956
6000 +: $ 0.09314
15000 +: $ 0.08671
30000 +: $ 0.08564
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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 CMPT8599 Transistor (TR) is a type of semiconductor device which is used in a wide range of applications including power management and signal processing. The main purpose of a TR is to control the flow of current in an electrical circuit by changing its resistance. This is achieved by the principle of voltage control. The TR is made up of three terminals: the base, the collector and the emitter. To understand the working principle of TR, one must first understand the basic structure and behavior of a transistor.

 A TR is commonly known as a bipolar junction transistor (BJT). The BJT is made up of two p-type semiconductor materials and one n-type material, which are bonded together to form a single structure. The two p-type materials are the base material and the collector material. The n-type material is the emitter material. When two p-type materials and one n-type material are combined in the form of a BJT, they form the three terminals of a transistor, which are the base, collector and emitter terminaals.

The current flow in a transistor is controlled by the voltage applied to its base. When the base is supplied with a positive voltage, the current flow from the collector to the emitter increases. On the other hand, if the voltage applied to the base is negative, the current flow from the collector to the emitter decreases. This phenomenon is known as transconductance.

In a BJT, the base current is used to control the current flow from the collector to the emitter. The base current is supplied with a relatively small current which is known as the emitter current. The emitter current only flows through the transistor when a voltage is applied to the base. This voltage is known as the base-emitter voltage (Vbe). The base current will only flow when the base-emitter voltage is greater than the required threshold voltage.

When the base of a transistor is supplied with a positive voltage, the current flows from the collector to the emitter, and this current is called the collector current (Ic). Since the collector current is proportional to the base current, it can be used as an indicator of the base current. The gain of a transistor is usually determined by the ratio of the collector current to the base current. This gain is known as the current gain of the transistor (Beta, β).

The working principle of a TR can be used in a variety of applications. In the field of signal processing, a transistor can be used to amplify an input signal, such as an audio signal. In power management, the transistor can be used to control the flow of current in power circuits, such as in the regulation of DC and AC power supplies. The TR can also be used in switching applications, where it can be used to switch between two states quickly and reliably.

In conclusion, CMPT8599 TR is a type of three-terminal semiconductor device which is used in a wide range of applications. Its principle of operation is based on the voltage control of current flow through the base and the emitter-collector junction. The current gain of the transistor, which is determined by the ratio of the collector current to the base current, is used in signal processing and power management applications. Moreover, the TR can be used for fast switching operations in order to achieve reliable and efficient control of electrical circuits.

The specific data is subject to PDF, and the above content is for reference

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