CMST2907A BK Allicdata Electronics
Allicdata Part #:

CMST2907ABK-ND

Manufacturer Part#:

CMST2907A BK

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS PNP 60V 0.6A SOT323
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 275m...
DataSheet: CMST2907A BK datasheetCMST2907A BK Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 275mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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CMST2907A BK is a type of single bipolar junction transistor (BJT). BJTs are three-terminal semiconductor devices that are used to amplify electrical signals, as well as switch and regulate current. The three terminals are the emitter, collector, and base, and they are connected together using metal or silicon interconnects in the form of integrated circuits (ICs). With its unique structure, the BJT can be used in a wide variety of applications, such as in amplifiers, analog circuits, digital circuits, switching, and power control. As such, an understanding of the BJT is critical for those who are involved in electronic design.

CMST2907A BK has a current gain range of 30-500 and a frequency range of 0.1-2.5 GHz. It is a Chinese-made BJT, meaning that it is often less expensive than other similar transistors on the market. Its operating temperature range is -40°C to +150°C.

The working principle of a BJT is based on the concept of a virtual emitter, which is the region between the base and the emitter. When the base voltage is applied, holes are injected into the virtual emitter. These holes are then attracted to the collector, where a current flow is created. In most cases, this current flow is much greater than the current injected by the base, creating a gain between the input and the output. BJDs are classified as either an n-p-n or p-n-p type, depending on the conductivity of the junctions they form.

The CMST2907A BK is a p-n-p BJT, meaning it has a positively-doped emitter and a negatively-doped base. When a current is applied to the base, the emitter-base junction becomes reversed biased, with the majority carriers moving away from the junction to the collector. This causes a voltage drop across the resistor, increasing the current flow between the collector and the emitter. As the current flow increases, so does the voltage at the collector, which is used as the output voltage.

CMST2907A BK transistors are commonly used in audio amplifier circuits, as well as radio communication and switching. They are also often used as voltage regulators in order to limit the output of devices such as power supplies. Their wide current range and low operating temperature have made them attractive for many applications.

In conclusion, CMST2907A BK is a single bipolar junction transistor (BJT) that is used for a variety of different applications. It has a wide current range, high operating temperature range, and low cost. It works on the principle of a virtual emitter, where a current is injected into the base and then attracted to the collector, creating a gain between the input and the output. Finally, it is often used in audio amplifiers, radio communication, switching, and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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