CMST5089 TR Allicdata Electronics
Allicdata Part #:

CMST5089TR-ND

Manufacturer Part#:

CMST5089 TR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 30V 50MA SOT323
More Detail: Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 275mW ...
DataSheet: CMST5089 TR datasheetCMST5089 TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05027
6000 +: $ 0.04525
15000 +: $ 0.04022
30000 +: $ 0.03771
75000 +: $ 0.03352
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 275mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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CMST5089 is a single-sized bipolar junction transistor (BJT) transistor specifically designed to operate in the temperature range of -55C to 150C. The device features an optimized package design, which allows for a very low thermal resistance and a wide operating temperature range. The device can be used for a variety of applications, including power management, audio, display, and wireless systems.

The CMST5089 features a low-power silicon epitaxial collector design, which limits the maximum power dissipation to 150mW. The device includes two terminals, the collector and the base. The collector terminal is connected to the intrinsic base of the device, while the base terminal is connected to an external source of current. The base voltage is applied to the device to turn the BJT transistor on or off. By applying an appropriate voltage to the base, the current flowing through the collector can be accurately controlled.

The bipolar junction transistor provides an efficient current amplification factor. It is constructed using a layer of positively charged N-type material and an adjacent layer of negatively charged P-type material. A voltage differential between the emitter and the collector terminals induces an electric field, which allows current to flow. Consequently, a small current flowing through the base terminal can control or switch a much larger current flowing through the collector.

The CMST5089 is available in both NPN and PNP varieties. The NPN type is configured normally open and shut off when there is current flow from the collector to the base, while the PNP type is normally closed and switches on when there is current from the base to the collector. Both devices feature an integrated resistor, which provides a predetermined amount of current between the collector and the base. This current is limited based on the resistor value, and it can be used to control the speed of switching.

In addition to its basic switching function, the CMST5089 can also be used as an amplifying device. By applying a voltage to the base, the device can produce a larger voltage swing at the collector output. This can be used to amplify signals while maintaining low power consumption. The device is also useful in a variety of power management systems, such as motor control, projectors, and LEDs.

The CMST5089 is a high-temperature bipolar junction transistor that can be used in a variety of applications requiring precise switching, power management, and signal amplification. The device is specifically designed to operate in extreme temperature ranges, and its optimized package design allows for a very low thermal resistance. The device can be used for a variety of applications, including power management, audio, display, and wireless systems.

The specific data is subject to PDF, and the above content is for reference

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