CMST3904 TR Allicdata Electronics
Allicdata Part #:

CMST3904TR-ND

Manufacturer Part#:

CMST3904 TR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 40V 0.2A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 275m...
DataSheet: CMST3904 TR datasheetCMST3904 TR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.05715
6000 +: $ 0.05398
15000 +: $ 0.04922
30000 +: $ 0.04604
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 275mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The CMST3904 TR is a high-performance NPN bipolar junction transistor (BJT) used in switching and amplifier applications. The transistor is characterized by its low saturation voltage, high gain, low noise, and low turn-on and turn-off times. It is designed to be used in many different applications, ranging from consumer electronics to automotive and industrial applications.

CMST3904 TR is used for both switching and linear power applications. It is a common choice for use in analog circuits, in audio amplifiers, and in low-noise, wide band-width amplifiers. It is also used in RF applications where its ultralow noise levels are advantageous. Its low saturation voltage and fast turn-on times make it suitable for high-speed logic switching. Its popularity in certain applications, especially audio, is because of its low noise levels and high fidelity.

The transistor’s working principle is based on the junction of two different semiconductor materials, one p-type and one n-type, connected together in a way that allows electrons to flow between the two materials. The current flow is controlled by applying a voltage to the base-emitter junction of the transistor; when the base-emitter voltage (VBE) is low, no current can flow between the collector and emitter; when the base-emitter voltage (VBE) is higher, a current is allowed to flow between the collector and emitter.

The current gain of a transistor is determined by a parameter known as the relevant current gain, or “beta” (β). It is a measure of the relation between the base current and the collector current of a transistor, and it is generally expressed in volts over amperes (V/A). The larger the current gain, the greater the amount of collector current flowing for a given base current.

The CMST3904 TR has been designed for optimal performance in a wide variety of applications. In addition to its high gain and low noise characteristics, it has a relatively low saturation voltage and fast turn-on and turn-off times. It is suitable for use in a variety of switching, amplifier, and logic applications, as well as in audio amplifiers and RF systems. Additionally, due to its high gain and low noise characteristics, it is often preferred for use in circuits that require high performance but operate at low power.

In summary, CMST3904 TR is a high-performance single-NPN bipolar junction transistor (BJT) designed for use in switching and amplifier applications. It has a wide range of specifications, including low saturation voltage, low noise, and fast turn-on and turn-off times. It is suitable for use in a variety of analog and digital circuits, and is often chosen for its low noise characteristics and high performance. The transistor’s working principle is based on the junction of two semiconductor materials and its current gain is determined by its relevant current gain, or “beta” (β).

The specific data is subject to PDF, and the above content is for reference

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