CPH5541-TL-E Allicdata Electronics
Allicdata Part #:

CPH5541-TL-E-ND

Manufacturer Part#:

CPH5541-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
More Detail: Bipolar (BJT) Transistor Array NPN, PNP (Emitter C...
DataSheet: CPH5541-TL-E datasheetCPH5541-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 40V, 30V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Power - Max: 600mW
Frequency - Transition: 540MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: 5-CPH
Description

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Transistors - Bipolar (BJT) - Arrays

The CPH5541-TL-E is an integrated circuit package comprised of an array of four NPN Bipolar Junction Transistors (BJT) on a single chip. The type of chip is a surface mount, and its dimensions are just 1.0x 0.63x 0.35 inch (2.5x 1.6x 0.9 mm).

Bipolar Junction Transistors (BJTs) are three terminal semiconductor devices with three junctions: a base-collector junction, a collector-emitter junction and a base-emitter junction. The CPH5541-TL-E four NPN transistor array is of the 75H type, and each transistor within the array can handle up to 500mA. Their maximum VCE of 25V, with a PNP gain range of 60 – 80 and a maximum VCE saturated power rating of 0.375W is a fairly robust device.

The purpose of this array is to provide improved performance over discrete BJT configurations. By combining four transistors into one array, it is possible to save space, reduce component count, save costs, and reduce power needs. This package is particularly well suited for high-speed switched circuits such as automotive voltage sensors, and circuit protecting and switching applications.

The CPH5541-TL-E has two distinct modes of operation: common emitter (CE) configuration and common collector (CC) configuration. In the CE configuration, the base and collector terminals are tied together. This creates a single emitter circuit which is used to switch ON and OFF an external load. In the CC configuration, the emitter and collector terminals are tied together. This creates a single base circuit which is used to switch ON and OFF the external load.

Each bipolar junction transistor in the CPH5541-TL-E has two gains. The Forward Current Gain of the transistor is obtained by applying a current to the base and observing the change in the collector current. The reverse current gain is obtained by measuring the change in the collector current when a voltage is applied to the base. The CPH5541-TL-E is also equipped with a built in temperature sensor which is used to monitor the temperature of each of the transistors in the array. All of these combined parameters result in a very reliable and efficient device.

The CPH5541-TL-E array is an ideal solution for many applications where high current capacity and large size requirements are a must. It can be used in a variety of circuits such as switching, current control, load sharing and signal conversion. It is a low cost, high performance device that can be used in many types of electronic systems.

The CPH5541-TL-E is a versatile and robust device that can be used in various applications including automotive, industrial and consumer applications. The CPH5541-TL-E offers superior performance while maintaining a very small size. Its features make it a very attractive option for cost-effective, high-performance integrated circuit package.

The specific data is subject to PDF, and the above content is for reference

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