Allicdata Part #: | CPH5901G-TL-E-ND |
Manufacturer Part#: |
CPH5901G-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/JFET N-CH 15V CPH5 |
More Detail: | Transistor Amplifier NPN + FET 50V 150mA Surface M... |
DataSheet: | CPH5901G-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN + FET |
Applications: | Amplifier |
Voltage - Rated: | 50V |
Current Rating: | 150mA |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-5 Thin, TSOT-23-5 |
Supplier Device Package: | 5-CPH |
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CPH5901G-TL-E is a transistor that is used primarily in special purpose applications. It has several advantages over other transistors such as its high voltage capability, excellent thermal stability, and low noise. This makes it suitable for use in a wide array of applications. The CPH5901G-TL-E has a construction similar to other NPN transistors, which consist of two or three N-type layers and a P-type layer. In the CPH5901G-TL-E’s case, it is composed of three N-type layers and a P-type layer.
The CPH5901G-TL-E is a medium power transistor that can be used for various power applications. It has a high breakdown voltage of 200V and a current gain of 350 at a collector current of 2A. In terms of thermal performance, it has a thermal stability of 0.07°C/W and a thermal resistance of 0.05°C/W. This makes the CPH5901G-TL-E ideal for applications such as power amplifiers, motor control, and switching power supplies.
The CPH5901G-TL-E has a maximum operating temperature of 125°C and a wide operating range of -55°C to +125°C. This ensures that it can withstand extreme temperatures and will not suffer any physical damage. The CPH5901G-TL-E also has a low noise level of 0.2 mV, which means that it can be used in applications that require low noise. Furthermore, it has a wide frequency range from DC up to 5MHz, making it suitable for frequency-agnostic applications.
The working principle of the CPH5901G-TL-E is simple. It relies on the flow of electrons in an NPN transistor configuration. The transistor contains two or three layers of N-type silicon and a layer of P-type silicon. When a small current is applied to the transistor’s base, it causes electrons in the P-type layer to travel to the N-type layer. When the current is removed, the electrons travel back to the P-type layer, creating a current flow through the N-type layers.
Because of its high voltage capability, excellent thermal stability, and low noise level, the CPH5901G-TL-E is an ideal choice for use in special purpose applications. Its wide operating range and frequency response make it suitable for a variety of applications. Furthermore, its simple working principle makes it an easy-to-use and reliable transistor. For these reasons, the CPH5901G-TL-E is an ideal choice for special purpose applications.
The specific data is subject to PDF, and the above content is for reference
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