CPH5902G-TL-E Allicdata Electronics
Allicdata Part #:

CPH5902G-TL-E-ND

Manufacturer Part#:

CPH5902G-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/JFET N-CH 15V CPH5
More Detail: Transistor Amplifier NPN + FET 50V 50mA Surface Mo...
DataSheet: CPH5902G-TL-E datasheetCPH5902G-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN + FET
Applications: Amplifier
Voltage - Rated: 50V
Current Rating: 50mA
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: 5-CPH
Description

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Transistors - Special Purpose

The CPH5902G-TL-E is a transistor made from gallium arsenide which is designed primarily for specialized, high frequency applications and RF amplification. This special purpose semiconductor device offers superior high frequency performance, low switching loss and superior noise rejection.

The physical form of this transistor is much smaller than any other of its type. The CPH5902G-TL-E also exhibits superior performance in high temperature operation and reliability. The device structure and packaging have been optimized to provide maximum efficiency and ruggedness in extreme environments.

The CPH5902G-TL-E is used primarily in applications where high frequency, low noise and extreme environmental conditions are encountered. It is well suited for high-speed switching and high frequency device combining and isolation. Additionally, the CPH5902G-TL-E can be used in a variety of general purpose RF, power and switching applications. The high frequency switching performance of this transistor makes it particularly useful for applications in digital communication systems and wireless devices.

In order to achieve the superior high frequency performance of the CPH5902G-TL-E, specialized design techniques are employed. The unique design of this transistor results in exceptional switching loss and superior noise rejection. Additionally, the superior thermal performance of the transistor allows it to operate at temperatures up to 150°C.

The CPH5902G-TL-E is designed such that its gate source voltage (VGS)is extremely low. This highly efficient design results in reduced switching and gate drive power, thus improving device performance. Additionally, the CPH5902G-TL-E is designed to operate across a wide range of VGS and utilizes low-cost gate drive components.

Due to its superior high frequency performance and low size, the CPH5902G-TL-E is well suited for applications involving RF, PA modules and multiplexers. Additionally, the low VGS of the device enables low-power applications such as smart-phone feature phones, digital radio, radio frequency tracking devices and toy control systems.

In addition to the features mentioned above, the CPH5902G-TL-E also offers superior noise immunity and surge protection. The circuit design features prevention from flux loops, transients and arcing, making it useful for a variety of high frequency applications. Furthermore, due to its superior frequency and RF characteristics, the CPH5902G-TL-E is capable of providing clean matched signals, which is beneficial in communications and radar networks.

The CPH5902G-TL-E is an ideal choice for applications requiring high frequency performance, low power consumption and superior noise immunity. This special purpose transistor offers superior high frequency performance and low switching loss while being small in size, increasing efficiency and reliability. It is designed to operate in extreme environmental conditions and its highly efficient design allows it to be used in many different applications.

The specific data is subject to PDF, and the above content is for reference

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