Allicdata Part #: | DDB6U180N16RR-ND |
Manufacturer Part#: |
DDB6U180N16RR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT DDB6U180N16RRBPSA1 |
More Detail: | IGBT Module Trench Field Stop Dual Brake Chopper 1... |
DataSheet: | DDB6U180N16RR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Configuration: | Dual Brake Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 140A |
Power - Max: | 515W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The DDB6U180N16RR is part of a group of transistors known as IGBTs or insulated-gate bipolar transistors. These devices A provide the high power handling capability of a bipolar transistor along with the high switching speed and low switching loss of a MOSFET power transistor.
Within the IGBT family, the DDB6U180N16RR is considered a module, which is a device combining multiple IGBT components with associated control and drive circuitry in a single housing. It is designed for higher efficiency, higher current switching, and higher power dissipation than traditional transistor designs.
Application Field
The DDB6U180N16RR is typically used in high-current, high-temperature industrial applications. Industries including automotive, medical, and military applications take advantage of this module’s enhanced power efficiency. Examples include motor controls, power converters, and induction heating systems.
Working Principle
The IGBT module is an electronic switch consisting of multiple chips containing field-effect and bipolar transistors. When a voltage is applied to the gate terminal, the field-effect transistor (FET) is biased on, allowing current to move between the source and drain terminals. This current flows through the IGBT components, creating a junction field effect between the collector and emitter.
The IGBT type module also has a freewheeling diode connected parallel with the IGBT, which blocks shorts and reduces the losses associated with inductive load switching. When the IGBT module is turned off, the diode is forward-biased, allowing current to flow easily and preventing a large reverse voltage spike.
The IGBT module also contains control circuitry, which provides protections against short circuit, thermal overload and other conditions that can damage the module. This circuitry can be adjusted if needed to protect the module from high temperatures, current fluctuations and other environmental conditions.
Conclusion
In conclusion, the DDB6U180N16RR module is a high-current, high-temperature industrial device for the switching of power. It combines the advantages of field-effect and bipolar transistors in a single package, with associated protective circuitry for added safety and reliability. This module is ideal for motor control, power conversion and induction heating applications.
The specific data is subject to PDF, and the above content is for reference
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