Allicdata Part #: | DDB6U75N16W1RB11BOMA1-ND |
Manufacturer Part#: |
DDB6U75N16W1RB11BOMA1 |
Price: | $ 23.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE MOD CHOPPER-IGBT 1600V 60A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | DDB6U75N16W1RB11BOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 21.75050 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 69A |
Power - Max: | 335W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The DDB6U75N16W1RB11BOMA1 is an insulated-gate bipolar transistor (IGBT) module with the ability to provide efficient and fast switching operation. As such, it is an essential component in industrial automation, robotics, and other application fields demanding reliable power control and switching. The DDB6U75N16W1RB11BOMA1 exhibits a wide variety of features, making it an ideal choice in such systems where stability and precision are required. Its features include a low saturation voltage, greater power density, fast turn-on and turn-off times, and improved frequency response. In addition, its manufacturing process ensures robust construction and a long service life with low failure rates.The DDB6U75N16W1RB11BOMA1 is a three-terminal device, with a collector, an emitter, and a gate terminal. When a small voltage is applied to the gate terminal, it activates the MOSFET inside the device, allowing current to flow from the collector to the emitter. This allows for fast switching, as the gate voltage can be easily switched on and off. When the gate voltage is switched off, the current is limited and no longer flows from the collector to the emitter, leading to the device being in the blocking state.The power of the DDB6U75N16W1RB11BOMA1 ranges from 6,000 to 7,500V and the maximum current is 16A. It is rated for operating temperatures between –40°C and 125°C, making it suitable for a wide variety of environments. It also has an anti-parallel diode, allowing it to be used in resonant-type circuits and resulting in higher efficiency and better power control. The DDB6U75N16W1RB11BOMA1 is ideal for applications that require fast switching and excellent precision. Due to its high power-handling capabilities and low failure rates, it is often used in power converters, motor drives, motor control systems, AC drive systems, and induction heating. In addition, its anti-parallel diode enables it to be used in resonant circuits, making it a popular choice for use in variable-speed drives and for controlling variable-frequency AC power.Due to its characteristics, the DDB6U75N16W1RB11BOMA1 is an excellent choice for applications that require both fast switching and precise control. As a result, it is widely used in a variety of applications, from industrial automation to robotics and from AC drives to induction heating.
The specific data is subject to PDF, and the above content is for reference
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