DDB6U104N16RRBOSA1 Allicdata Electronics
Allicdata Part #:

DDB6U104N16RRBOSA1-ND

Manufacturer Part#:

DDB6U104N16RRBOSA1

Price: $ 47.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE MODULE GP 1600V 25A
More Detail: Diode Array 3 Independent Standard 1600V 25A (DC) ...
DataSheet: DDB6U104N16RRBOSA1 datasheetDDB6U104N16RRBOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 43.10960
Stock 1000Can Ship Immediately
$ 47.9
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 3 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Content

DDB6U104N16RRBOSA1 is a high voltage array which is categorized under Diodes - Rectifiers - Arrays. As a surface mount device (SMD), this diode array is suitable for automated placed and wave soldering processes. Utilizing an isolated package, it can reduce heat generation and reduce the possibility of short circuit leakage.

The DDB6U104N16RRBOSA1 can be used in many applications including power supplies, automotive, consumer electronics, and industrial automation. It can also be used in high voltage applications such as AC/DC converters, HVAC power supplies, telecommunications, lighting, and power conversion.

The main features of the DDB6U104N16RRBOSA1 are its high breakdown voltage (BV), maximum working voltage (VWM), high forward surge current (Icomponent), fast turn-on time (tcomponent), and low capacitance (Ccomponent). The BV values range from 200V to 2000V, while the VWM ranges from 60V to 1000V. It can also handle a maximum of 5A of forward surge current and turn-on times of up to 10ns.

The working principle of the DDB6U104N16RRBOSA1 diode array is based on its breakdown voltage. The diode array is designed to block current until the applied voltage reaches its BV, at which point current will start flowing. As the applied voltage increases, so does the current flow. This is due to the PN junction\'s ability to act as a rectifier and switch, allowing for efficient conversion of DC power. It also has a capacitance, which is responsible for the turn-on time of the diode array.

In conclusion, the DDB6U104N16RRBOSA1 diode array is a versatile device with many applications and can handle high voltage applications. It is an ideal choice for power supplies, automotive, consumer electronics, and industrial automation applications. It is also very efficient in its ability to convert DC power and is built to last with its fast turn-on time and low capacitance values.

The specific data is subject to PDF, and the above content is for reference

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