| Allicdata Part #: | DDB6U180N16RRB37BOSA1-ND |
| Manufacturer Part#: |
DDB6U180N16RRB37BOSA1 |
| Price: | $ 77.54 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT DDB6U180N16RRB37BOSA1 |
| More Detail: | IGBT Module Surface Mount Module |
| DataSheet: |  DDB6U180N16RRB37BOSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 70.49140 |
Specifications
| Series: | * |
| Part Status: | Active |
| Mounting Type: | Surface Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
Description
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The DDB6U180N16RRB37BOSA1 is an IGBT module made by Mitsubishi Electric. This type of module is a type of insulated gate bipolar transistor. It is often used in applications involving power switching, motor inverters, and industrial motor drives. The DDB6U180N16RRB37BOSA1 is a high current, low-voltage module that is designed to be very efficient and capable of withstanding high temperatures.
Application Fields
The DDB6U180N16RRB37BOSA1 is ideal for applications that require a large amount of current to be switched, such as motor inverters. It is used in industrial applications such as machine tools and production equipment. It can also be used in variable frequency drives, frequency converters, and home appliances. The DDB6U180N16RRB37BOSA1 has a low gate turn-on voltage and a low gate drive power requirement, which makes it particularly suitable for applications that require a high switching frequency. This makes it particularly useful for motor inverters and variable frequency drives, where it is important to switch the current quickly and efficiently.Working Principle
The DDB6U180N16RRB37BOSA1 operates on the same principle as a standard insulated gate bipolar transistor. It consists of two parts: the base device, which is typically composed of an N-type semiconductor, and an insulated gate, which is typically composed of a P-type semiconductor. When a positive voltage is applied to the base device, electrons are attracted to the positive charge and move into the gate. This creates a current between the gate and the base, causing the current to flow from the gate to the base. When the current is removed from the gate, the transistor switches off.The DDB6U180N16RRB37BOSA1 is designed to be very efficient and to be capable of withstanding high temperature levels. This makes it particularly suitable for industrial applications that require a high current and low voltage. The DDB6U180N16RRB37BOSA1 also offers additional safety features such as reverse voltage protection. This ensures that the module will not be damaged if the current is reversed. It also has an active clamp circuit which limits the peak current to protect the module from overheating and damage.Conclusion
The DDB6U180N16RRB37BOSA1 is a highly efficient and reliable IGBT module that is designed to be used in applications involving power switching, motor inverters, and industrial motor drives. It has a low gate turn-on voltage, low gate drive power requirements, and additional safety features such as reverse voltage protection and an active clamp circuit. These features make it suitable for applications that require a high switching frequency and high currents.The specific data is subject to PDF, and the above content is for reference
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