Allicdata Part #: | DDB6U180N16RRB11BPSA1-ND |
Manufacturer Part#: |
DDB6U180N16RRB11BPSA1 |
Price: | $ 65.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE MOD CHOPPER-IGBT 1600V 60A |
More Detail: | IGBT Module Trench Field Stop 3 Independent 1200V ... |
DataSheet: | DDB6U180N16RRB11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 59.61310 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 3 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 140A |
Power - Max: | 515W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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A standard IGBT power module is comprised of individual insulated gate bipolar transistors (IGBTs) that are operable in the three bi-directional potentials of high and low power, high and low voltage, and high and low current. The IGBT power module in the DDB6U180N16RRB11BPSA1 contains six individual power devices that are designed for large-current and high-voltage applications. This IGBT module is suitable for any application requiring high voltage and large current current, such as AC drives, switching regulator applications, and high voltage DC/DC converters.
The DDB6U180N16RRB11BPSA1 IGBT power module has a built-in bus-bar support, which allows for easy installation and increases the flexibility of the module’s mounting options. This IGBT power module also features a high EMC immunity, a low on-resistance, and a fast turn-off with heavy dV/dt immunity. These features allow for this module to operate at higher switching frequency while providing a wide range of current and voltage range choices.
The working principle of the DDB6U180N16RRB11BPSA1 is based on the transfer of charge to the gate terminal by forming a conductive channel between the emitter and collector. This is accomplished by using a positive voltage applied to the gate terminal. When this positive voltage is applied, the negative charge is transferred to the gate terminal, which in turn forms a conductive channel between the emitter and collector, allowing current to flow from the emitter to the collector. The application field of use for this IGBT module can be implemented in switching regulator applications, industrual machinery applications, as well as wind turbines and solar power plants.
The DDB6U180N16RRB11BPSA1 is a versatile IGBT power module which can be used to support a wide variety of applications. This IGBT module has a high EMC immunity, a low on-resistance, and a fast turn-off with heavy dV/dt immunity. This makes it perfect for applications that require high voltage and large current current, such as AC drives, switching regulator applications and high voltage DC/DC converters.
The built-in bus-bar support of this IGBT power module increases the flexibility of the module’s mounting options and allows for easy installation. Combined with its low on-resistance, fast turn-off and heavy dV/dt immunity, this IGBT module is the ideal solution for high voltage and large current applications. It is suitable for use in switching regulator applications, industrial machinery applications and wind turbines and solar power plants.
The specific data is subject to PDF, and the above content is for reference
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