Allicdata Part #: | DDC113TU-7-FDITR-ND |
Manufacturer Part#: |
DDC113TU-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN PREBIAS 0.2W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DDC113TU-7-F Datasheet/PDF |
Quantity: | 27000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDC113 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDC113TU-7-F is a pre-biased bipolar junction transistor array. The device is made up of two NPN transistors, each with an integrated base-emitter resistor. This device is designed to provide an efficient and economical solution in a wide variety of applications.
Application Field
The DDC113TU-7-F is primarily used as a DC amplifier and is suitable for applications such as audio power amplifier systems, motor and highly capacitance loads, and power supplies. The device also has useful characteristics for applications such as switches, accelerometers, level detectors, and timing circuits. The device is an excellent choice for low-power analog circuits, as it has an extremely low noise level and high linearity.
Working Principle
A standard configuration of the DDC113TU-7-F consists of two NPN transistors connected in series with an integrated base-emitter resistor. The internal structure consists of two NPN BJTs and a resistor. The resistor provides base-emitter bias for the two transistors and ensures that the voltage across the two transistors remains constant. This allows the device to operate in a linear range without gasping, thereby providing consistent performance. The device has excellent characteristics with regard to thermal stability and low leakage current.
The two transistors of the array have separate collector-emitter paths, thus allowing them to drive different loads. In this way, the device can be configured to provide higher powered output, thus increasing its versatility. The device is also designed to be protected against thermal overload, with special circuitry that reduces the gain in response to excessive current. This feature helps to protect the device from overheating and damage due to high current loads.
This device is also resistant to EMF and radiation, which makes it suitable for use in high-voltage or high-radiation environments. The device is also protected from reverse current damage via the integrated base-emitter resistor. This protection ensures that the device can withstand a high degree of electrical stress, thus providing consistent performance.
The DDC113TU-7-F is a high-performance device and is suitable for use in a wide range of applications. It has excellent linearity, low noise levels, and excellent thermal stability, making it an ideal choice for high-power DC amplifiers and power supplies. Additionally, the device has an integrated base-emitter resistor to protect against reverse current and other damage.
The specific data is subject to PDF, and the above content is for reference
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